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Journal ArticleDOI

Intrinsic stress in sputter-deposited thin films

Henry Windischmann
- 01 Jan 1992 - 
- Vol. 17, Iss: 6, pp 547-596
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

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Citations
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Journal ArticleDOI

Length-scale-dependent cracking and buckling behaviors of nanostructured Cu/Cr multilayer films on compliant substrates

TL;DR: In this article, the effects of the length-scale-dependent deformation and adhesion energies on the buckling behaviors were discussed, and a combined dimensionless parameter of K IC / E f Γ (E f : elastic modulus of the NMF) was proposed to assess buckling behavior, and the K IC/E f ǫ contours coincided well with the boundaries dividing the four buckling regimes.
Book ChapterDOI

Deposition techniques for chalcogenide thin films

TL;DR: In this paper, the authors discuss key issues, advantages and influence of different deposition techniques and experimental conditions on properties of as-prepared amorphous chalcogenide thin films.
Journal ArticleDOI

Nanostructured chromium nitride films with a valley of residual stress

TL;DR: In this article, a series of chromium nitride films has been prepared by reactive DC magnetron sputtering onto multiple moving substrates, and the films are characterized via an array of experimental techniques, including high-resolution synchrotron radiation X-ray scattering, transmission electron microscope (TEM), atomic force microscope (AFM) and double-crystal diffraction topography (DCDT).
Journal ArticleDOI

Tailoring the nanostructure of Ti–Si–N thin films by HiPIMS in deep oscillation magnetron sputtering (DOMS) mode

TL;DR: In this article, the nanostructured TiSiN films were deposited by DOMS (deep oscillation magnetron sputtering) mode and the crystal structure of the films was analyzed by X-ray diffraction (XRD) with a parallel beam in both θ-2θ and GIXRD geometries.
Book ChapterDOI

Physical Sputtering and Sputter Deposition (Sputtering)

TL;DR: The physical sputtering process involves the physical vaporization of atoms from a surface by momentum transfer from bombarding energetic atomic-sized particles as discussed by the authors, where the energetic particles are usually ions of a gaseous material accelerated in an electric field.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI

Mechanical properties of thin films

TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Book

Thin film phenomena

Journal ArticleDOI

High Rate Thick Film Growth

TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.
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