Journal ArticleDOI
Intrinsic stress in sputter-deposited thin films
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.Abstract:
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...read more
Citations
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Journal ArticleDOI
The Effect of Incident Kinetic Energy on Stress in Sputter-Deposited Refractory-Metal Thin Films
TL;DR: In this paper, the authors apply a Monte Carlo (MC) technique to simulate the transport of sputtered atoms and reflected neutrals in a background gas, and find a quantitative correlation between the stress transition pressures and the incident kinetic energy of both sputtered atom and neutrals during film growth.
Journal ArticleDOI
Study of residual stress in reactively sputtered epitaxial Si-doped GaN films
M. Monish,S.S. Major +1 more
TL;DR: In this paper , Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar-N2 growth atmosphere.
Proceedings ArticleDOI
Investigations on the Role of Stress and Defects in the Protective Layers of Durable Silver Mirrors
TL;DR: In this article , the effects of stress and defects on the extent and mechanisms of corrosion of a mirror were evaluated by accelerated testing to elucidate the effect of stress on its properties.
Patent
Optical arrangement for euv radiation with a shield for protection against the etching effect of a plasma
TL;DR: In this article, an optical arrangement for EUV radiation, comprising of at least one reflective optical element (16) having a main body (30) with a coating (31) that reflects EUVs radiation, was proposed.
References
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Journal ArticleDOI
Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI
Mechanical properties of thin films
TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI
Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings
TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Journal ArticleDOI
High Rate Thick Film Growth
TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.