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Journal ArticleDOI

Intrinsic stress in sputter-deposited thin films

Henry Windischmann
- 01 Jan 1992 - 
- Vol. 17, Iss: 6, pp 547-596
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

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Citations
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Journal ArticleDOI

Growth anisotropy and self-shadowing: A model for the development of in-plane texture during polycrystalline thin-film growth

TL;DR: In this paper, the development of a preferred crystallographic orientation in the plane of growth, an in-plane texture, is addressed in a model that incorporates anisotropic growth rates of a material and self-shadowing.
Journal ArticleDOI

Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering

TL;DR: In this paper, the relationship between the electrical properties of ITO films and O2 partial pressure, the resistivity, carrier concentration and mobility, film density, and intrinsic stress in the films were measured as a function of O 2 partial pressure.
Journal ArticleDOI

Analysis of electromechanical boundary effects on the pull-in of micromachined fixed–fixed beams

TL;DR: In this paper, the authors used a commercial finite-element simulation tool to evaluate the effect of electrostatic field fringing, plane-strain conditions and anchor compliance on the performance of fixed-fixed beams.
Journal ArticleDOI

Thickness-dependent fcc–hcp phase transformation in polycrystalline titanium thin films

TL;DR: In this paper, a correlation between stress and crystallographic texture vis-a-vis the face-centered cubic (fcc) and hexagonal close-packed structure (hcp) phase transformation has been established.
Journal ArticleDOI

Stress, phase stability and oxidation resistance of ternary Ti–Me–N (Me = Zr, Ta) hard coatings

TL;DR: In this paper, the phase formation, stress development, thermal stability and oxidation resistance of two ternary transition metal nitride systems, namely Ti-Zr-N and Ti-Ta-N, in the whole compositional range were comparatively studied.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI

Mechanical properties of thin films

TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Book

Thin film phenomena

Journal ArticleDOI

High Rate Thick Film Growth

TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.
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