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Journal ArticleDOI

Intrinsic stress in sputter-deposited thin films

Henry Windischmann
- 01 Jan 1992 - 
- Vol. 17, Iss: 6, pp 547-596
TLDR
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process as discussed by the authors, and extensive experimental evidence show a direct link between the particle flux and energy striking the condensing film, which determines the nature and magnitude of the stress.
Abstract
A review of the sputtered film stress literature shows that the intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. Modeling studies of film growth and extensive experimental evidence show a direct link between the energetics of the deposition process and film microstructure, which in turn determines the nature and magnitude of the stress. The fundamental quantities are the particle flux and energy striking the condensing film, which are a function of many process parameters such as pressure (discharge voltage), target/sputtering gas mass ratio, cathode shape, bias voltage, and substrate orientation. Tensile stress is generally observed in zone 1-type, porous films and is explained in terms of the grain boundary relaxation model, whereas compressive stress, observed in zone T-type, dense films, is interpreted in terms of the atomic peening mechanism. Modeling of the atomic peening mechanism and experimental data indicate that the normalized moment...

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Citations
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Journal ArticleDOI

Mechanical property characterization of sputtered and plasma enhanced chemical deposition (PECVD) silicon nitride films after rapid thermal annealing

TL;DR: In this article, the residual stress, Young's modulus, hardness, fracture toughness, and interfacial strength of both sputtered and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films deposited on silicon wafers were measured and compared.
Journal ArticleDOI

Comparison of the telephone cord delamination method for measuring interfacial adhesion with the four-point bending method

TL;DR: In this article, the results of the four-point bend method were compared with the results obtained by measuring the dimensions of the delaminations and using available fracture mechanics models, and the results showed that the four point bend method provided similar interface fracture energy values compared to the telephone cord induced delamination.
Patent

Method and apparatus for controllable sodium delivery for thin film photovoltaic materials

Neil Mackie, +1 more
TL;DR: In this article, a solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer and a second electrode located on the n-type substrate.

Length-scale-dependent cracking andbuckling behaviors of nanostructured Cu/Crmultilayer films on compliant substrates

Zhang, +5 more
TL;DR: In this paper, the effects of the length-scale-dependent deformation and adhesion energies on the buckling behaviors were discussed, and a combined dimensionless parameter of K IC / E f Γ (E f : elastic modulus of the NMF) was proposed to assess the buckle behaviors, and the K IC/Ef Γ contours coincided well with the boundaries dividing the four buckling regimes.
Journal ArticleDOI

Residual stresses and microstructure in tungsten thin films analyzed by x-ray diffraction-evolution under ion irradiation

TL;DR: In this article, the atomic peening model was proposed to explain the mechanical state of tungsten thin films and the contribution of the most energetic W particles to the stress generation process.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI

Mechanical properties of thin films

TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI

Influence of apparatus geometry and deposition conditions on the structure and topography of thick sputtered coatings

TL;DR: Two cylindrically symmetric and complementary sputtering geometries, the post and hollow cathodes, were used to deposit thick coatings of various metals (Mo, Cr, Ti, Fe, Cu, and Al-alloy) onto glass and metallic substrates at deposition rates of 1000-2000 A/min under various conditions of substrate temperature, argon pressure, and plasma bombardment as mentioned in this paper.
Book

Thin film phenomena

Journal ArticleDOI

High Rate Thick Film Growth

TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.
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