Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

doi:10.1063/1.5115013

Open AccessJournal ArticleDOI

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

James Spencer Lundh, +16 more

- 09 Oct 2019 -

Applied Physics Letters

- Vol. 115, Iss: 15, pp 153503

Chats0

TLDR

In this article, a multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles.

Abstract:

Improvements in radio frequency and power electronics can potentially be realized with ultrawide bandgap materials such as aluminum gallium nitride (AlxGa1−xN). Multidimensional thermal characterization of an Al0.30Ga0.70N channel high electron mobility transistor (HEMT) was done using Raman spectroscopy and thermoreflectance thermal imaging to experimentally determine the lateral and vertical steady-state operating temperature profiles. An electrothermal model of the Al0.30Ga0.70N channel HEMT was developed to validate the experimental results and investigate potential device-level thermal management. While the low thermal conductivity of this III-N ternary alloy system results in more device self-heating at room temperature, the temperature insensitive thermal and electrical output characteristics of AlxGa1−xN may open the door for extreme temperature applications.

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References

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Journal ArticleDOI

Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate

Shreepad Karmalkar, +1 more

- 01 Aug 2001 -

IEEE Transactions on Electron Devices

TL;DR: In this paper, the authors investigated the breakdown (V/sub br/) enhancement potential of the field plate (FP) technique in the context of AlGaN/GaN power HEMTs.

...read moreread less

Journal ArticleDOI

Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control

Martin Kuball

- 01 Oct 2001 -

Surface and Interface Analysis

TL;DR: In this paper, the use of micro-Raman spectroscopy to monitor non-invasively GaN, AlGaN and AlN material parameters for process and growth monitoring/control is demonstrated.

...read moreread less

Journal ArticleDOI

A frequency-domain thermoreflectance method for the characterization of thermal properties.

Alexander Schmidt, +2 more

- 01 Sep 2009 -

Review of Scientific Instruments

TL;DR: A frequency-domain thermoreflectance method for measuring the thermal properties of homogenous materials and submicron thin films and its sensitivity to various thermal properties is given, along with results from measurements of several standard materials over a wide range of thermal diffusivities.

...read moreread less

Journal ArticleDOI

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Andrei Sarua, +6 more

- 25 Sep 2006 -

IEEE Transactions on Electron Devices

TL;DR: In this article, a self-heating in AlGaN/GaN device structures was probed using integrated micro-Raman/Infrared (IR) thermography.

...read moreread less

Journal ArticleDOI

Thermal conduction in AlxGa1−xN alloys and thin films

Weili Liu, +1 more

- 25 Mar 2005 -

Journal of Applied Physics

TL;DR: In this article, the effect of the mass fraction x and temperature on thermal conductivity in AlxGa1−xN thin films was investigated using the differential 3ω technique in the temperature range from 80 to 400 K.

...read moreread less