Journal ArticleDOI
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
Atsushi Tsukazaki,Akira Ohtomo,Takeyoshi Onuma,M. Ohtani,Takayuki Makino,Masatomo Sumiya,Keita Ohtani,Shigefusa F. Chichibu,S. Fuke,Yusaburou Segawa,Hideo Ohno,Hideomi Koinuma,Masashi Kawasaki +12 more
TLDR
In this paper, the authors used a new technique to fabricate p-type ZnO reproducibly, and showed high-quality undoped films with electron mobility exceeding that in the bulk.Abstract:
Since the successful demonstration of a blue light-emitting diode (LED)1, potential materials for making short-wavelength LEDs and diode lasers have been attracting increasing interest as the demands for display, illumination and information storage grow2,3,4. Zinc oxide has substantial advantages including large exciton binding energy, as demonstrated by efficient excitonic lasing on optical excitation5,6. Several groups have postulated the use of p-type ZnO doped with nitrogen, arsenic or phosphorus7,8,9,10, and even p–n junctions11,12,13. However, the choice of dopant and growth technique remains controversial and the reliability of p-type ZnO is still under debate14. If ZnO is ever to produce long-lasting and robust devices, the quality of epitaxial layers has to be improved as has been the protocol in other compound semiconductors15. Here we report high-quality undoped films with electron mobility exceeding that in the bulk. We have used a new technique to fabricate p-type ZnO reproducibly. Violet electroluminescence from homostructural p–i–n junctions is demonstrated at room-temperature.read more
Citations
More filters
Journal ArticleDOI
Epitaxial growth and luminescence properties of ZnO-based heterojunction light-emitting diode on Si(1 1 1) substrate by pulsed-laser deposition
Yiwen W Zhang,Xuchao Li,W D Yu,Xiang Gao,Yanfei Gu,Chang Yang,Jun Zhao,Xiao Wei Sun,Swee Tiam Tan,J. F. Kong,Wenzhong Shen +10 more
TL;DR: In this article, an epitaxial ZnO heterojunction light-emitting diode with an n-ZnO/MgO/TiN/n+Si structure is produced by pulsed-laser deposition.
Journal ArticleDOI
Electrical characterization of ZnO, including analysis of surface conductivity
TL;DR: In this article, the effect of a surface conducting channel on homoepitaxial MgZnO layers grown by liquid-phase epitaxy has been investigated using secondary ion mass spectroscopy.
Journal ArticleDOI
Tailoring physical functionalities of complex oxides by vertically aligned nanocomposite thin-film design
TL;DR: In this article, the authors summarize recent progress on vertically aligned nanocomposite thin films for enhanced functionalities such as ferroelectricity, tunable magnetoresistance, multiferroicity, dielectricity, magnetic anisotropy, perpendicular exchange bias, novel electrical/ionic properties, interfacial conduction, and resistive switching.
Journal ArticleDOI
Robust low resistivity p-type ZnO:Na films after ultraviolet illumination: The elimination of grain boundaries
TL;DR: In this article, the p-type behavior of moderately Na-doped ZnO films is strengthened in the subsequent several minutes by negatively charged oxygen species at grain boundaries, which may be detrimental to the ptype behavior.
Journal ArticleDOI
Zn ∕ Au Ohmic Contacts on n-Type ZnO Epitaxial Layers for Light-Emitting Devices
TL;DR: In this paper, the authors investigated thermally stable and low resistance Zn/Au ohmic contacts on Al-doped n-type ZnO layers, which produced linear current-voltage behaviors when annealed at temperatures in the range of 300 to 600°C for 1 min in a nitrogen ambient.
References
More filters
Book
Semiconductor Devices: Physics and Technology
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
Journal ArticleDOI
Hydrogen as a cause of doping in zinc oxide
Van de Walle,G Chris +1 more
TL;DR: A first-principles investigation, based on density functional theory, produces strong evidence that hydrogen acts as a source of conductivity: it can incorporate in high concentrations and behaves as a shallow donor.
Journal ArticleDOI
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.
TL;DR: HBN is shown to be a promising material for compact ultraviolet laser devices because it has a direct bandgap in the ultraviolet region and evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided.