Journal ArticleDOI
Ultra-low power, highly uniform polymer memory by inserted multilayer graphene electrode
Byung Chul Jang,Hyejeong Seong,Jong Yun Kim,Jong Yun Kim,Beom Jun Koo,Sungkyu Kim,Sang Yoon Yang,Sung Gap Im,Sung-Yool Choi +8 more
- Vol. 2, Iss: 4, pp 044013
TLDR
In this paper, a multilayer graphene (MLG) was inserted at the electrode/polymer interface to improve the resistive switching uniformity and reduce the power consumption.Abstract:
Filament type resistive random access memory (RRAM) based on polymer thin films is a promising device for next generation, flexible nonvolatile memory. However, the resistive switching nonuniformity and the high power consumption found in the general filament type RRAM devices present critical issues for practical memory applications. Here, we introduce a novel approach not only to reduce the power consumption but also to improve the resistive switching uniformity in RRAM devices based on poly(1,3,5-trimethyl-3,4,5-trivinyl cyclotrisiloxane) by inserting multilayer graphene (MLG) at the electrode/polymer interface. The resistive switching uniformity was thereby significantly improved, and the power consumption was markedly reduced by 250 times. Furthermore, the inserted MLG film enabled a transition of the resistive switching operation from unipolar resistive switching to bipolar resistive switching and induced self-compliance behavior. The findings of this study can pave the way toward a new area of application for graphene in electronic devices.read more
Citations
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Journal ArticleDOI
Resistive Switching Performance Improvement via Modulating Nanoscale Conductive Filament, Involving the Application of Two-Dimensional Layered Materials.
Yu Li,Yu Li,Shibing Long,Shibing Long,Qi Liu,Qi Liu,Hangbing Lv,Hangbing Lv,Ming Liu,Ming Liu +9 more
TL;DR: Two-dimensional nanomaterials with excellent properties including and beyond graphene, are discussed with emphasis on performance improvement by their active roles as the switching layer, insertion layer, thin electrode, patterned electrode, and edge electrode.
Journal ArticleDOI
Initiated Chemical Vapor Deposition: A Versatile Tool for Various Device Applications
Seung Jung Yu,Kwanyong Pak,Moo Jin Kwak,Munkyu Joo,Bong-Jun Kim,Myung Seok Oh,Jieung Baek,Hongkeun Park,Goro Choi,Do Heung Kim,Junhwan Choi,Yunho Choi,Jihye Shin,Heeyeon Moon,Eunjung Lee,Sung Gap Im +15 more
Journal ArticleDOI
Decade of 2D-materials-based RRAM devices: a review.
Muhammad Muqeet Rehman,Hafiz Mohammad Mutee Ur Rehman,Jahan Zeb Gul,Woo Young Kim,Khasan S. Karimov,Nisar Ahmed +5 more
TL;DR: Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed, less power losses, lower threshold voltage, long retention time, high electrical endurance and extended mechanical robustness.
Journal ArticleDOI
Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.
Byung Chul Jang,Hyejeong Seong,Sungkyu Kim,Jong Yun Kim,Beom Jun Koo,Junhwan Choi,Sang Yoon Yang,Sung Gap Im,Sung-Yool Choi +8 more
TL;DR: The pV3D3-RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10 (5) cycles, and robust immunity to mechanical stress.
Journal ArticleDOI
Highly improved performance in Zr0.5Hf0.5O2 films inserted with graphene oxide quantum dots layer for resistive switching non-volatile memory
Xiaobing Yan,Xiaobing Yan,Lei Zhang,Yongqiang Yang,Zhenyu Zhou,Jianhui Zhao,Yuanyuan Zhang,Qi Liu,Jingsheng Chen +8 more
TL;DR: In this article, a novel approach to resolve the problem of random nature of the nucleation and growth of the conductive filaments (CFs) caused instability of the switching parameter, which is a major obstacle for RRAM performance improvement, was proposed by inserting graphene oxide quantum dots (GOQDs) in Zr0.5Hf0.2 (ZHO) films.
References
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Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
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Journal ArticleDOI
Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping
Zhongrui Wang,Wei Zhu,A. Y. Du,L. Wu,Zheng Fang,X. A. Tran,Wen-Jun Liu,Kailiang Zhang,H-Y Yu +8 more
TL;DR: In this paper, an atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated.
Journal ArticleDOI
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Comprehensive modeling of resistive switching in the Al/TiOx/TiO2/Al heterostructure based on space-charge-limited conduction
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