Showing papers on "Wafer published in 2015"

High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

Abstract: The large-scale growth of semiconducting thin films forms the basis of modern electronics and optoelectronics. A decrease in film thickness to the ultimate limit of the atomic, sub-nanometre length scale, a difficult limit for traditional semiconductors (such as Si and GaAs), would bring wide benefits for applications in ultrathin and flexible electronics, photovoltaics and display technology. For this, transition-metal dichalcogenides (TMDs), which can form stable three-atom-thick monolayers, provide ideal semiconducting materials with high electrical carrier mobility, and their large-scale growth on insulating substrates would enable the batch fabrication of atomically thin high-performance transistors and photodetectors on a technologically relevant scale without film transfer. In addition, their unique electronic band structures provide novel ways of enhancing the functionalities of such devices, including the large excitonic effect, bandgap modulation, indirect-to-direct bandgap transition, piezoelectricity and valleytronics. However, the large-scale growth of monolayer TMD films with spatial homogeneity and high electrical performance remains an unsolved challenge. Here we report the preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide (MoS2) and tungsten disulphide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films. They are grown with a newly developed, metal-organic chemical vapour deposition technique, and show high electrical performance, including an electron mobility of 30 cm(2) V(-1) s(-1) at room temperature and 114 cm(2) V(-1) s(-1) at 90 K for MoS2, with little dependence on position or channel length. With the use of these films we successfully demonstrate the wafer-scale batch fabrication of high-performance monolayer MoS2 field-effect transistors with a 99% device yield and the multi-level fabrication of vertically stacked transistor devices for three-dimensional circuitry. Our work is a step towards the realization of atomically thin integrated circuitry.

Wafer-level light emitting diode package and method of fabricating the same

Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

Growth of wafer-scale MoS2 monolayer by magnetron sputtering

Abstract: The two-dimensional layer of molybdenum disulfide (MoS2) exhibits promising prospects in the applications of optoelectronics and valleytronics. Herein, we report a successful new process for synthesizing wafer-scale MoS2 atomic layers on diverse substrates via magnetron sputtering. Spectroscopic and microscopic results reveal that these synthesized MoS2 layers are highly homogeneous and crystallized; moreover, uniform monolayers at wafer scale can be achieved. Raman and photoluminescence spectroscopy indicate comparable optical qualities of these as-grown MoS2 with other methods. The transistors composed of the MoS2 film exhibit p-type performance with an on/off current ratio of ∼10(3) and hole mobility of up to ∼12.2 cm(2) V(-1) s(-1). The strategy reported herein paves new ways towards the large scale growth of various two-dimensional semiconductors with the feasibility of controllable doping to realize desired p- or n-type devices.

Wafer Map Failure Pattern Recognition and Similarity Ranking for Large-Scale Data Sets

Abstract: Wafer maps can exhibit specific failure patterns that provide crucial details for assisting engineers in identifying the cause of wafer pattern failures. Conventional approaches of wafer map failure pattern recognition (WMFPR) and wafer map similarity ranking (WMSR) generally involve applying raw wafer map data (i.e., without performing feature extraction). However, because increasingly more sensor data are analyzed during semiconductor fabrication, currently used approaches can be inadequate in processing large-scale data sets. Therefore, a set of novel rotation- and scale-invariant features is proposed for obtaining a reduced representation of wafer maps. Such features are crucial when employing WMFPR and WMSR to analyze large-scale data sets. To validate the performance of the proposed system, the world’s largest publicly accessible data set of wafer maps was built, comprising 811 457 real-world wafer maps. The experimental results show that the proposed features and overall system can process large-scale data sets effectively and efficiently, thereby meeting the requirements of current semiconductor fabrication.

Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout

Abstract: We demonstrate humidity sensing using a change of electrical resistance of a single- layer chemical vapor deposited (CVD) graphene that is placed on top of a SiO2 layer on a Si wafer. To investigate the selectivity of the sensor towards the most common constituents in air, its signal response was characterized individually for water vapor (H2O), nitrogen (N2), oxygen (O2), and argon (Ar). In order to assess the humidity sensing effect for a range from 1% relative humidity (RH) to 96% RH, devices were characterized both in a vacuum chamber and in a humidity chamber at atmospheric pressure. The measured response and recovery times of the graphene humidity sensors are on the order of several hundred milliseconds. Density functional theory simulations are employed to further investigate the sensitivity of the graphene devices towards water vapor. Results from the interaction between the electrostatic dipole moment of the water and the impurity bands in the SiO2 substrate, which in turn leads to electrostatic doping of the graphene layer. The proposed graphene sensor provides rapid response direct electrical read out and is compatible with back end of the line (BEOL) integration on top of CMOS-based integrated circuits.

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Abstract: Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal contacts has not been well understood yet. We provide a comprehensive ab initio study of the interfacial properties of a series of monolayer (ML) and bilayer (BL) MoS2-metal contacts (metal = Sc, Ti, Ag, Pt, Ni, and Au). A comparison between the calculated and observed Schottky barrier heights (SBHs) suggests that many-electron effects are strongly suppressed in channel 2D MoS2 due to a charge transfer. The extensively adopted energy band calculation scheme fails to reproduce the observed SBHs in 2D MoS2-Sc interface. By contrast, an ab initio quantum transport device simulation better reproduces the observed SBH in the two types of contacts and highlights the importance of a higher level theoretical approach beyond the energy band calculation in the interface study. BL MoS2-metal contacts have a reduced SBH than ML MoS2-metal contacts due to the interlayer coupling and thus have a higher electron injection efficiency.

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

Abstract: Vertically stacking two-dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures on a wafer scale with an atomically sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode. Highly efficient photodetector arrays were fabricated, based on few-layer GaSe on Si. These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust, with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust, and large-area 2D heterostructures and presents a crucial step for further practical applications.

All Silicon Electrode Photocapacitor for Integrated Energy Storage and Conversion

Abstract: We demonstrate a simple wafer-scale process by which an individual silicon wafer can be processed into a multifunctional platform where one side is adapted to replace platinum and enable triiodide reduction in a dye-sensitized solar cell and the other side provides on-board charge storage as an electrochemical supercapacitor. This builds upon electrochemical fabrication of dual-sided porous silicon and subsequent carbon surface passivation for silicon electrochemical stability. The utilization of this silicon multifunctional platform as a combined energy storage and conversion system yields a total device efficiency of 2.1%, where the high frequency discharge capability of the integrated supercapacitor gives promise for dynamic load-leveling operations to overcome current and voltage fluctuations during solar energy harvesting.

Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

Abstract: Integration of chemical vapor deposited polycrystalline diamond offers promising thermal performance for GaN-based high power radio frequency amplifiers. One limiting factor is the thermal barrier at the GaN to diamond interface, often referred to as the effective thermal boundary resistance (TBReff). Using a combination of transient thermoreflectance measurement, finite element modeling and microstructural analysis, the TBReff of GaN-on-diamond wafers is shown to be dominated by the SiNx interlayer for diamond growth seeding, with additional impacts from the diamond nucleation surface. By decreasing the SiNx layer thickness and minimizing the diamond nucleation region, TBReff can be significantly reduced, and a TBReff as low as 12 m2K/GW is demonstrated. This enables a major improvement in GaN-on-diamond transistor thermal resistance with respect to GaN-on-SiC wafers. A further reduction in TBReff towards the diffuse mismatch limit is also predicted, demonstrating the full potential of using diamond as the heat spreading substrate.

Engineering a nanostructured "super surface" with superhydrophobic and superkilling properties.

Abstract: We present a nanostructured “super surface” fabricated using a simple recipe based on deep reactive ion etching of a silicon wafer. The topography of the surface is inspired by the surface topographical features of dragonfly wings. The super surface is comprised of nanopillars 4 μm in height and 220 nm in diameter with random inter-pillar spacing. The surface exhibited superhydrophobicity with a static water contact angle of 154.0° and contact angle hysteresis of 8.3°. Bacterial studies revealed the bactericidal property of the surface against both gram negative (Escherichia coli) and gram positive (Staphylococcus aureus) strains through mechanical rupture of the cells by the sharp nanopillars. The cell viability on these nanostructured surfaces was nearly six-fold lower than on the unmodified silicon wafer. The nanostructured surface also killed mammalian cells (mouse osteoblasts) through mechanical rupture of the cell membrane. Thus, such nanostructured super surfaces could find applications for designing self-cleaning and anti-bacterial surfaces in diverse applications such as microfluidics, surgical instruments, pipelines and food packaging.

Heterogeneous microring and Mach-Zehnder modulators based on lithium niobate and chalcogenide glasses on silicon.

Abstract: Thin films of lithium niobate are wafer bonded onto silicon substrates and rib-loaded with a chalcogenide glass, Ge(23)Sb(7)S(70), to demonstrate strongly confined single-mode submicron waveguides, microring modulators, and Mach-Zehnder modulators in the telecom C band. The 200 μm radii microring modulators present 1.2 dB/cm waveguide propagation loss, 1.2 × 10(5) quality factor, 0.4 GHz/V tuning rate, and 13 dB extinction ratio. The 6 mm long Mach-Zehnder modulators have a half-wave voltage-length product of 3.8 V.cm and an extinction ratio of 15 dB. The demonstrated work is a key step towards enabling wafer scale dense on-chip integration of high performance lithium niobate electro-optical devices on silicon for short reach optical interconnects and higher order advanced modulation schemes.

Wafer-scale growth of VO2 thin films using a combinatorial approach.

Abstract: Transition metal oxides offer functional properties beyond conventional semiconductors. Bridging the gap between the fundamental research frontier in oxide electronics and their realization in commercial devices demands a wafer-scale growth approach for high-quality transition metal oxide thin films. Such a method requires excellent control over the transition metal valence state to avoid performance deterioration, which has been proved challenging. Here we present a scalable growth approach that enables a precise valence state control. By creating an oxygen activity gradient across the wafer, a continuous valence state library is established to directly identify the optimal growth condition. Single-crystalline VO2 thin films have been grown on wafer scale, exhibiting more than four orders of magnitude change in resistivity across the metal-to-insulator transition. It is demonstrated that 'electronic grade' transition metal oxide films can be realized on a large scale using a combinatorial growth approach, which can be extended to other multivalent oxide systems.

Semiconductor device and manufacturing method thereof

Abstract: Provided are a semiconductor device and a manufacturing method thereof. The manufacturing method of a semiconductor device includes the following steps. A temporary bonding layer is used to adhere a carrier to a first surface of a wafer. A redistribution layer, an insulating layer, and a conductive structure are formed on a second surface of the wafer opposite to the first surface, such that a semiconductor element is formed. The semiconductor element is diced from the insulating layer to the carrier, such that the semiconductor element forms at least one sub-semiconductor element. UV light is used to irradiate the sub-semiconductor element, such that adhesion of the temporary bonding layer is eliminated. The carrier of the sub-semiconductor element is removed. The method makes an image sensing element on a wafer not easy to pollute in a manufacture procedure, and cost of dust-free room devices and technicists is reduced. In addition, the method does not need UV-light tapes, and reduces manufacturing cost.

Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss

Abstract: The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

Alkali-templated surface nanopatterning of chalcogenide thin films: a novel approach toward solar cells with enhanced efficiency.

Abstract: Concepts of localized contacts and junctions through surface passivation layers are already advantageously applied in Si wafer-based photovoltaic technologies. For Cu(In,Ga)Se2 thin film solar cells, such concepts are generally not applied, especially at the heterojunction, because of the lack of a simple method yielding features with the required size and distribution. Here, we show a novel, innovative surface nanopatterning approach to form homogeneously distributed nanostructures (<30 nm) on the faceted, rough surface of polycrystalline chalcogenide thin films. The method, based on selective dissolution of self-assembled and well-defined alkali condensates in water, opens up new research opportunities toward development of thin film solar cells with enhanced efficiency.

Thickness modulated MoS2 grown by chemical vapor deposition for transparent and flexible electronic devices

Abstract: Two-dimensional (2D) materials have been a great interest as high-performance transparent and flexible electronics due to their high crystallinity in atomic thickness and their potential for variety applications in electronics and optoelectronics. The present study explored the wafer scale production of MoS2 nanosheets with layer thickness modulation from single to multi-layer by using two-step method of metal deposition and CVD process. The formation of high-quality and layer thickness-modulated MoS2 film was confirmed by Raman spectroscopy, AFM, HRTEM, and photoluminescence analysis. The layer thickness was identified by employing a simple method of optical contrast value. The image contrast in green (G) channel shows the best fit as contrast increases with layer thickness, which can be utilized in identifying the layer thickness of MoS2. The presence of critical thickness of Mo for complete sulphurization, which is due to the diffusion limit of MoS2 transformation, changes the linearity of structural, ...

p-type microcrystalline silicon oxide emitter for silicon heterojunction solar cells allowing current densities above 40 mA/cm2

Abstract: We have developed a microcrystalline silicon oxide (μc-SiOx:H) p-type emitter layer that significantly improves the light incoupling at the front side of silicon heterojunction solar cells by minimizing reflection losses. The μc-SiOx:H p-layer with a refractive index of 2.87 at 632 nm wavelength and the transparent conducting oxide form a stack with refractive indexes which consecutively decrease from silicon to the ambient air and thus significantly reduce the reflection. Optical simulations performed for flat wafers reveal that the antireflective effect of the emitter overcompensates the parasitic absorption and suggest an ideal thickness of about 40 nm. On textured wafers, the increase in current density is still more than 1 mA/cm2 for a typical emitter thickness of 10 nm. Thus, we are able to fabricate heterojunction solar cells with current densities significantly over 40 mA/cm2 and power conversion efficiency above 20%, which is yet mainly limited by the cell's fill factor.

Reactor system for sublimation of pre-clean byproducts and method thereof

Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.

Wafer-Bonded GaInP/GaAs//Si Solar Cells With 30% Efficiency Under Concentrated Sunlight

Abstract: Highly efficient III–V/Si triple-junction solar cells were realized by a fabrication process based on direct wafer bonding: Ga0.51In0.49P/GaAs dual-junction solar cells were grown inverted by metal organic vapor phase epitaxy on GaAs substrates and bonded to separately fabricated Si solar cells. The fast atom beam activated direct wafer bond between highly doped n-Si and n-GaAs enabled a transparent and electrically conductive interface. Challenges arising from the different thermal expansion coefficients of Si and the III–V semiconductors were circumvented, as the bonding was performed at moderate temperatures of 120 °C. The external quantum efficiency and current–voltage characteristics of the wafer-bonded triple-junction solar cells were thoroughly investigated, and a maximum efficiency of 30.0% was found for a concentration factor of 112.

A comprehensive review on convex and concave corners in silicon bulk micromachining based on anisotropic wet chemical etching

Abstract: Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to the appearance of {111} facets at the sidewalls of the fabricated structures. In wet anisotropic etching, undercutting occurs at the extruded corners and the curved edges of the mask patterns on the wafer surface. The rate of undercutting depends upon the type of etchant and the shape of mask edges and corners. Furthermore, the undercutting takes place at the straight edges if they do not contain {111} planes. {100} and {110} silicon wafers are most widely used in MEMS as well as microelectronics fabrication. This paper reviews the fabrication techniques of convex corner on {100} and {110} silicon wafers using anisotropic wet chemical etching. Fabrication methods are classified mainly into two major categories: corner compensation method and two-steps etching technique. In corner compensation method, extra mask pattern is added at the corner. Due to extra geometry, etching is delayed at the convex corner and hence the technique relies on time delayed etching. The shape and size of the compensating design strongly depends on the type of etchant, etching depth and the orientation of wafer surface. In this paper, various kinds of compensating designs published so far are discussed. Two-step etching method is employed for the fabrication of perfect convex corners. Since the perfectly sharp convex corner is formed by the intersection of {111} planes, each step of etching defines one of the facets of convex corners. In this method, two different ways are employed to perform the etching process and therefore can be subdivided into two parts. In one case, lithography step is performed after the first step of etching, while in the second case, all lithography steps are carried out before the etching process, but local oxidation of silicon (LOCOS) process is done after the first step of etching. The pros and cons of all techniques are discussed.

Four-junction wafer bonded concentrator solar cells

Abstract: The highest solar cell conversion efficiencies are achieved with Four-junction devices under concentrated sunlight illumination. Different cell architectures are under development, all targeting an ideal bandgap combination close to 1.9 eV, 1.4 eV, 1.0 eV and 0.7 eV. Wafer bonding is used in this work to combine materials with a significant lattice-mismatch. Three cell architectures are presented using the same two top junctions of GaInP/GaAs but different infrared absorbers based on Germanium, GaSb or GaInAs on InP. The modelled efficiency potential at 500 suns is in the range of 49–54 % for all three devices but the highest efficiency is expected for the InP-based cell. An efficiency of 46 % at 508-suns was already measured by AIST in Japan for a GaInP/GaAs//GaInAsP/GaInAs solar cell and represents the highest independently confirmed efficiency today. Solar cells on Ge and GaSb are in the development phase at Fraunhofer ISE and first demonstration of functional devices is presented in this paper.

Wafer-Scale Precise Patterning of Organic Single-Crystal Nanowire Arrays via a Photolithography-Assisted Spin-Coating Method.

Abstract: A photolithography-assisted spin-coating approach is developed to produce single-crystal organic nanowire (NW) arrays at designated locations with high precision and high efficiency. This strategy enables the large-scale fabrication of organic NW arrays with nearly the same accuracy, reliability, and flexibility as photolithography. The high mobilities of the organic NWs enable the control of the switch of multicolored light-emitting devices with good stability.

Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors.

Abstract: The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.

Nano‐cones on micro‐pyramids: modulated surface textures for maximal spectral response and high‐efficiency solar cells

Abstract: The front-side reflection represents a significant optical loss in solar cells. One way to minimize this optical loss is to nano-texture the front surface. Although nano-textured surfaces have shown a broad-band anti-reflective effect, their light scattering and surface passivation properties are found to be generally worse than those of standard micro-textured surfaces. To overcome these setbacks in crystalline silicon solar cells, advanced texturing and passivation approaches are here presented. In the first approach, we propose a modulated surface texture by superimposing nano-cones on micro-pyramidal surface texture. This advanced texture applied at the front side of crystalline silicon wafers completely suppresses the reflection in a broad wavelength range from 300 nm up to 1000 nm and efficiently scatters light up to 1200 nm. In the second approach, we show a method to minimize recombination at nano-textured surfaces by using defect-removal etching followed by dry thermal oxidation. These two approaches are applied here in an interdigitated back-contacted crystalline silicon solar cell and result in decoupling of the interplay between the mechanisms behind short-circuit current density and open-circuit voltage. The device exhibits a conversion efficiency equal to 19.8%, record external quantum efficiency (78%) at short wavelengths (300 nm), and electrical performance equal to the performance of the reference interdigitated back-contacted device based on front-side micro-pyramids. Copyright © 2015 John Wiley & Sons, Ltd.

High confinement, high yield Si3N4 waveguides for nonlinear optical applications

Abstract: In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.

1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications

Abstract: High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific Germanium-On-Insulator 200 mm wafer to improve tolerance to high strains induced via shaping of the Ge layers into micro-bridges. Building on the high crystalline quality, we demonstrate bi-axial tensile strain of 1.9%, which is currently the highest reported value measured in thick (350 nm) Ge layer. Since this strain is generally considered as the onset of the direct bandgap in Ge, our realization paves the way towards mid-infrared lasers fully compatible with CMOS fab technology.

High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium‐Ion Batteries

Abstract: 3D micro/nanobatteries in high energy and power densities are drawing more and more interest due to the urgent demand of them in integrating with numerous micro/nanoscale electronic devices, such as smart dust, miniaturized sensors, actuators, BioMEMS chips, and so on. In this study, the electrochemical performances of 3D hexagonal match-like Si/Ge nanorod (NR) arrays buffered by TiN/Ti interlayer, which are fabricated on Si substrates by a cost-effective, wafer scale, and Si-compatible process are demonstrated and systematically investigated as the anode in sodium-ion batteries. The optimized Si/TiN/Ti/Ge composite NR array anode displays superior areal/specific capacities and cycling stability by reason of their favorable 3D nanostructures and the effective conductive layers of TiN/Ti thin films. Sodium-ion insertion behaviors are experimentally investigated in postmorphologies and elemental information of the cycled composite anode, and theoretically studied by the first principles calculation upon the adsorption and diffusion energies of sodium in Ge unit cell. The preferential diffusion of sodium in Ge structure over in Si lattice is evidently proved. The successful configuration of these distinctive wafer-scale Si-based Na-ion micro/nanobattery anodes can provide insight into exploring and designing new Si/Ge-based electrode materials, which can be integrated into micro-electronic devices as on chip power systems in the future.