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Showing papers by "Peter H. Beton published in 2020"


DOI
Claudia Backes1, Claudia Backes2, Amr M. Abdelkader3, Concepción Alonso4, Amandine Andrieux-Ledier5, Raul Arenal6, Raul Arenal7, Jon Azpeitia6, Nilanthy Balakrishnan8, Luca Banszerus9, Julien Barjon5, Ruben Bartali10, Sebastiano Bellani11, Claire Berger12, Claire Berger13, Reinhard Berger14, M.M. Bernal Ortega15, Carlo Bernard16, Peter H. Beton8, André Beyer17, Alberto Bianco18, Peter Bøggild19, Francesco Bonaccorso11, Gabriela Borin Barin20, Cristina Botas, Rebeca A. Bueno6, Daniel Carriazo21, Andres Castellanos-Gomez6, Meganne Christian, Artur Ciesielski18, Tymoteusz Ciuk, Matthew T. Cole, Jonathan N. Coleman2, Camilla Coletti11, Luigi Crema10, Huanyao Cun16, Daniela Dasler22, Domenico De Fazio3, Noel Díez, Simon Drieschner23, Georg S. Duesberg24, Roman Fasel25, Roman Fasel20, Xinliang Feng14, Alberto Fina15, Stiven Forti11, Costas Galiotis26, Costas Galiotis27, Giovanni Garberoglio28, Jorge M. Garcia6, Jose A. Garrido, Marco Gibertini29, Armin Gölzhäuser17, Julio Gómez, Thomas Greber16, Frank Hauke22, Adrian Hemmi16, Irene Hernández-Rodríguez6, Andreas Hirsch22, Stephen A. Hodge3, Yves Huttel6, Peter Uhd Jepsen19, I. Jimenez6, Ute Kaiser30, Tommi Kaplas31, HoKwon Kim29, Andras Kis29, Konstantinos Papagelis32, Konstantinos Papagelis27, Kostas Kostarelos33, Aleksandra Krajewska34, Kangho Lee24, Changfeng Li35, Harri Lipsanen35, Andrea Liscio, Martin R. Lohe14, Annick Loiseau5, Lucia Lombardi3, María Francisca López6, Oliver Martin22, Cristina Martín36, Lidia Martínez6, José A. Martín-Gago6, José I. Martínez6, Nicola Marzari29, Alvaro Mayoral37, Alvaro Mayoral7, John B. McManus2, Manuela Melucci, Javier Méndez6, Cesar Merino, Pablo Merino6, Andreas Meyer22, Elisa Miniussi16, Vaidotas Miseikis11, Neeraj Mishra11, Vittorio Morandi, Carmen Munuera6, Roberto Muñoz6, Hugo Nolan2, Luca Ortolani, A. K. Ott3, A. K. Ott38, Irene Palacio6, Vincenzo Palermo39, John Parthenios27, Iwona Pasternak40, Amalia Patanè8, Maurizio Prato41, Maurizio Prato21, Henri Prevost5, Vladimir Prudkovskiy13, Nicola M. Pugno42, Nicola M. Pugno43, Nicola M. Pugno44, Teófilo Rojo45, Antonio Rossi11, Pascal Ruffieux20, Paolo Samorì18, Léonard Schué5, Eki J. Setijadi10, Thomas Seyller46, Giorgio Speranza10, Christoph Stampfer9, I. Stenger5, Wlodek Strupinski40, Yuri Svirko31, Simone Taioli28, Simone Taioli47, Kenneth B. K. Teo, Matteo Testi10, Flavia Tomarchio3, Mauro Tortello15, Emanuele Treossi, Andrey Turchanin48, Ester Vázquez36, Elvira Villaro, Patrick Rebsdorf Whelan19, Zhenyuan Xia39, Rositza Yakimova, Sheng Yang14, G. Reza Yazdi, Chanyoung Yim24, Duhee Yoon3, Xianghui Zhang17, Xiaodong Zhuang14, Luigi Colombo49, Andrea C. Ferrari3, Mar García-Hernández6 
Heidelberg University1, Trinity College, Dublin2, University of Cambridge3, Autonomous University of Madrid4, Université Paris-Saclay5, Spanish National Research Council6, University of Zaragoza7, University of Nottingham8, RWTH Aachen University9, Kessler Foundation10, Istituto Italiano di Tecnologia11, Georgia Institute of Technology12, University of Grenoble13, Dresden University of Technology14, Polytechnic University of Turin15, University of Zurich16, Bielefeld University17, University of Strasbourg18, Technical University of Denmark19, Swiss Federal Laboratories for Materials Science and Technology20, Ikerbasque21, University of Erlangen-Nuremberg22, Technische Universität München23, Bundeswehr University Munich24, University of Bern25, University of Patras26, Foundation for Research & Technology – Hellas27, Center for Theoretical Studies, University of Miami28, École Polytechnique Fédérale de Lausanne29, University of Ulm30, University of Eastern Finland31, Aristotle University of Thessaloniki32, University of Manchester33, Polish Academy of Sciences34, Aalto University35, University of Castilla–La Mancha36, ShanghaiTech University37, University of Exeter38, Chalmers University of Technology39, Warsaw University of Technology40, University of Trieste41, Instituto Politécnico Nacional42, Queen Mary University of London43, University of Trento44, University of the Basque Country45, Chemnitz University of Technology46, Charles University in Prague47, University of Jena48, University of Texas at Dallas49
29 Jan 2020
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
Abstract: © 2020 The Author(s). We present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures. We adopt a 'hands-on' approach, providing practical details and procedures as derived from literature as well as from the authors' experience, in order to enable the reader to reproduce the results. Section I is devoted to 'bottom up' approaches, whereby individual constituents are pieced together into more complex structures. We consider graphene nanoribbons (GNRs) produced either by solution processing or by on-surface synthesis in ultra high vacuum (UHV), as well carbon nanomembranes (CNM). Production of a variety of GNRs with tailored band gaps and edge shapes is now possible. CNMs can be tuned in terms of porosity, crystallinity and electronic behaviour. Section II covers 'top down' techniques. These rely on breaking down of a layered precursor, in the graphene case usually natural crystals like graphite or artificially synthesized materials, such as highly oriented pyrolythic graphite, monolayers or few layers (FL) flakes. The main focus of this section is on various exfoliation techniques in a liquid media, either intercalation or liquid phase exfoliation (LPE). The choice of precursor, exfoliation method, medium as well as the control of parameters such as time or temperature are crucial. A definite choice of parameters and conditions yields a particular material with specific properties that makes it more suitable for a targeted application. We cover protocols for the graphitic precursors to graphene oxide (GO). This is an important material for a range of applications in biomedicine, energy storage, nanocomposites, etc. Hummers' and modified Hummers' methods are used to make GO that subsequently can be reduced to obtain reduced graphene oxide (RGO) with a variety of strategies. GO flakes are also employed to prepare three-dimensional (3d) low density structures, such as sponges, foams, hydro- or aerogels. The assembly of flakes into 3d structures can provide improved mechanical properties. Aerogels with a highly open structure, with interconnected hierarchical pores, can enhance the accessibility to the whole surface area, as relevant for a number of applications, such as energy storage. The main recipes to yield graphite intercalation compounds (GICs) are also discussed. GICs are suitable precursors for covalent functionalization of graphene, but can also be used for the synthesis of uncharged graphene in solution. Degradation of the molecules intercalated in GICs can be triggered by high temperature treatment or microwave irradiation, creating a gas pressure surge in graphite and exfoliation. Electrochemical exfoliation by applying a voltage in an electrolyte to a graphite electrode can be tuned by varying precursors, electrolytes and potential. Graphite electrodes can be either negatively or positively intercalated to obtain GICs that are subsequently exfoliated. We also discuss the materials that can be amenable to exfoliation, by employing a theoretical data-mining approach. The exfoliation of LMs usually results in a heterogeneous dispersion of flakes with different lateral size and thickness. This is a critical bottleneck for applications, and hinders the full exploitation of GRMs produced by solution processing. The establishment of procedures to control the morphological properties of exfoliated GRMs, which also need to be industrially scalable, is one of the key needs. Section III deals with the processing of flakes. (Ultra)centrifugation techniques have thus far been the most investigated to sort GRMs following ultrasonication, shear mixing, ball milling, microfluidization, and wet-jet milling. It allows sorting by size and thickness. Inks formulated from GRM dispersions can be printed using a number of processes, from inkjet to screen printing. Each technique has specific rheological requirements, as well as geometrical constraints. The solvent choice is critical, not only for the GRM stability, but also in terms of optimizing printing on different substrates, such as glass, Si, plastic, paper, etc, all with different surface energies. Chemical modifications of such substrates is also a key step. Sections IV-VII are devoted to the growth of GRMs on various substrates and their processing after growth to place them on the surface of choice for specific applications. The substrate for graphene growth is a key determinant of the nature and quality of the resultant film. The lattice mismatch between graphene and substrate influences the resulting crystallinity. Growth on insulators, such as SiO2, typically results in films with small crystallites, whereas growth on the close-packed surfaces of metals yields highly crystalline films. Section IV outlines the growth of graphene on SiC substrates. This satisfies the requirements for electronic applications, with well-defined graphene-substrate interface, low trapped impurities and no need for transfer. It also allows graphene structures and devices to be measured directly on the growth substrate. The flatness of the substrate results in graphene with minimal strain and ripples on large areas, allowing spectroscopies and surface science to be performed. We also discuss the surface engineering by intercalation of the resulting graphene, its integration with Si-wafers and the production of nanostructures with the desired shape, with no need for patterning. Section V deals with chemical vapour deposition (CVD) onto various transition metals and on insulators. Growth on Ni results in graphitized polycrystalline films. While the thickness of these films can be optimized by controlling the deposition parameters, such as the type of hydrocarbon precursor and temperature, it is difficult to attain single layer graphene (SLG) across large areas, owing to the simultaneous nucleation/growth and solution/precipitation mechanisms. The differing characteristics of polycrystalline Ni films facilitate the growth of graphitic layers at different rates, resulting in regions with differing numbers of graphitic layers. High-quality films can be grown on Cu. Cu is available in a variety of shapes and forms, such as foils, bulks, foams, thin films on other materials and powders, making it attractive for industrial production of large area graphene films. The push to use CVD graphene in applications has also triggered a research line for the direct growth on insulators. The quality of the resulting films is lower than possible to date on metals, but enough, in terms of transmittance and resistivity, for many applications as described in section V. Transfer technologies are the focus of section VI. CVD synthesis of graphene on metals and bottom up molecular approaches require SLG to be transferred to the final target substrates. To have technological impact, the advances in production of high-quality large-area CVD graphene must be commensurate with those on transfer and placement on the final substrates. This is a prerequisite for most applications, such as touch panels, anticorrosion coatings, transparent electrodes and gas sensors etc. New strategies have improved the transferred graphene quality, making CVD graphene a feasible option for CMOS foundries. Methods based on complete etching of the metal substrate in suitable etchants, typically iron chloride, ammonium persulfate, or hydrogen chloride although reliable, are time- and resourceconsuming, with damage to graphene and production of metal and etchant residues. Electrochemical delamination in a low-concentration aqueous solution is an alternative. In this case metallic substrates can be reused. Dry transfer is less detrimental for the SLG quality, enabling a deterministic transfer. There is a large range of layered materials (LMs) beyond graphite. Only few of them have been already exfoliated and fully characterized. Section VII deals with the growth of some of these materials. Amongst them, h-BN, transition metal tri- and di-chalcogenides are of paramount importance. The growth of h-BN is at present considered essential for the development of graphene in (opto) electronic applications, as h-BN is ideal as capping layer or substrate. The interesting optical and electronic properties of TMDs also require the development of scalable methods for their production. Large scale growth using chemical/physical vapour deposition or thermal assisted conversion has been thus far limited to a small set, such as h-BN or some TMDs. Heterostructures could also be directly grown.

330 citations


Journal ArticleDOI
TL;DR: In this paper, the lattice reconstruction in twisted bilayers of the transition metal dichalcogenides, MoS2 and WS2, was revealed using atomic-resolution transmission electron microscopy.
Abstract: Van der Waals heterostructures form a unique class of layered artificial solids in which physical properties can be manipulated through controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic-resolution transmission electron microscopy to reveal the lattice reconstruction in twisted bilayers of the transition metal dichalcogenides, MoS2 and WS2. For twisted 3R bilayers, a tessellated pattern of mirror-reflected triangular 3R domains emerges, separated by a network of partial dislocations for twist angles θ < 2°. The electronic properties of these 3R domains, featuring layer-polarized conduction-band states caused by lack of both inversion and mirror symmetry, appear to be qualitatively different from those of 2H transition metal dichalcogenides. For twisted 2H bilayers, stable 2H domains dominate, with nuclei of a second metastable phase. This appears as a kagome-like pattern at θ ≈ 2°, transitioning at θ → 0 to a hexagonal array of screw dislocations separating large-area 2H domains. Tunnelling measurements show that such reconstruction creates strong piezoelectric textures, opening a new avenue for engineering of 2D material properties. Lattice reconstruction in twisted transition metal dichalcogenides manifest in intrinsic asymmetry of electronic wavefunctions for 3R homo-bilayers and strong piezoelectric textures in 2H homo-bilayers.

116 citations


Journal ArticleDOI
TL;DR: Comparison of hexagonal boron nitride samples grown with different techniques and with varying carbon-doping content provides evidence that the defects emitting single photons in the visible range are carbon related.
Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.

114 citations


Journal ArticleDOI
TL;DR: It is shown that – under conditions relevant for device fabrication – the large chiroptical effects are caused by magneto-electric coupling, not structural chirality as previously assumed, and may occur because of local order in a cylinder blue phase-type organisation.
Abstract: Polymer thin films that emit and absorb circularly polarised light have been demonstrated with the promise of achieving important technological advances; from efficient, high-performance displays, to 3D imaging and all-organic spintronic devices. However, the origin of the large chiroptical effects in such films has, until now, remained elusive. We investigate the emergence of such phenomena in achiral polymers blended with a chiral small-molecule additive (1-aza[6]helicene) and intrinsically chiral-sidechain polymers using a combination of spectroscopic methods and structural probes. We show that - under conditions relevant for device fabrication - the large chiroptical effects are caused by magneto-electric coupling (natural optical activity), not structural chirality as previously assumed, and may occur because of local order in a cylinder blue phase-type organisation. This disruptive mechanistic insight into chiral polymer thin films will offer new approaches towards chiroptical materials development after almost three decades of research in this area.

58 citations


Journal ArticleDOI
TL;DR: In this paper, a resonant tunnelling transistor (RTT) based on a 2D InSe layer sandwiched between two multilayered graphene (MLG) electrodes is presented.
Abstract: Two-dimensional (2D) van der Waals (vdW) crystals have attracted considerable interest for digital electronics beyond Si-based complementary metal oxide semiconductor technologies. Despite the transformative success of Si-based devices, there are limits to their miniaturization and functionalities. Here we realize a resonant tunnelling transistor (RTT) based on a 2D InSe layer sandwiched between two multilayered graphene (MLG) electrodes. In the RTT the energy of the quantum-confined 2D subbands of InSe can be tuned by the thickness of the InSe layer. By applying a voltage across the two MLG electrodes, which serve as the source and drain electrodes to the InSe, the chemical potential in the source can be tuned in and out of resonance with a given 2D subband, leading to multiple regions of negative differential conductance that can be additionally tuned by electrostatic gating. This work demonstrates the potential of InSe and InSe-based RTTs for applications in quantum electronics. Limits on the functionality and miniaturization of Si-based devices present barriers towards integration into quantum electronics. The authors present an alternative, resonant tunnelling transistor based on a two-dimensional layered heterostructure, exhibiting multiple regions of negative differential conductance.

26 citations


Journal ArticleDOI
16 Apr 2020
TL;DR: In this article, the authors demonstrate lateral heteroepitaxial growth of graphene and hexagonal boron nitride (hBN) by sequential growth using high-temperature molecular beam epitaxy (MBE) on highly ordered pyrolytic graphite (HOPG).
Abstract: Integration of graphene and hexagonal boron nitride (hBN) into lateral heterostructures has drawn focus due to the ability to broadly engineer the material properties. Hybrid monolayers with tuneable bandgaps have been reported, while the interface itself possesses unique electronic and magnetic qualities. Herein, we demonstrate lateral heteroepitaxial growth of graphene and hBN by sequential growth using high-temperature molecular beam epitaxy (MBE) on highly ordered pyrolytic graphite (HOPG). We find, using scanning probe microscopy, that graphene growth nucleates at hBN step edges and grows across the surface to form nanoribbons with a controlled width that is highly uniform across the surface. The graphene nanoribbons grow conformally from the armchair edges of hexagonal hBN islands forming multiply connected regions with the growth front alternating from armchair to zigzag in regions nucleated close to the vertices of hexagonal hBN islands. Images with lattice resolution confirm a lateral epitaxial alignment between the hBN and graphene nanoribbons, while the presence of a moire pattern within the ribbons indicates that some strain relief occurs at the lateral heterojunction. These results demonstrate that high temperature MBE is a viable route towards integrating graphene and hBN in lateral heterostructures.

15 citations


Journal ArticleDOI
11 Sep 2020-ACS Nano
TL;DR: It is argued that surface adsorption provides a methodology for the study of fundamental optoelectronic properties of technologically-relevant polymers.
Abstract: The photophysics of a semiconducting polymer is manipulated through molecular self-assembly on an insulating surface. Adsorption of polythiophene (PT) monolayers on hexagonal boron nitride (hBN) leads to a structurally induced planarization and a rebalancing of inter- and intrachain excitonic coupling. This conformational control results in a dominant 0-0 photoluminescence peak and a reduced Huang-Rhys factor, characteristic of J-type aggregates, and optical properties which are significantly different to both PT thin films and single polymer strands. Adsorption on hBN also provides a route to explore electroluminescence from PT monolayers though incorporation into hybrid van der Waals heterostructures whereby the polymer monolayer is embedded within a hBN tunnel diode. In these structures we observe up-converted singlet electroluminescence from the PT monolayer, with an excitation mechanism based upon inelastic electron scattering. We argue that surface adsorption provides a methodology for the study of fundamental optoelectronic properties of technologically relevant polymers.

9 citations


Journal ArticleDOI
TL;DR: These heterostructures provide a solid-state device in which spin-triplet states can be controllably excited and provide a new route to investigate the physics, chemistry and quantum spin-based applications of triplet generation, emission and molecular photon up-conversion.
Abstract: We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated into van der Waals heterostructures with integral few-layer graphene contacts forming a molecular/two-dimensional hybrid tunneling diode. Electrons can tunnel through the hBN/molecular barrier under an applied voltage VSD, and we observe molecular electroluminescence from an excited singlet state with an emitted photon energy hν > eVSD, indicating upconversion by energies up to ∼1 eV. We show that tunneling electrons excite embedded molecules into singlet states in a two-step process via an intermediate triplet state through inelastic scattering and also observe direct emission from the triplet state. These heterostructures provide a solid-state device in which spin-triplet states, which cannot be generated by optical transitions, can be controllably excited and provide a new route to investigate the physics, chemistry, and quantum spin-based applications of triplet generation, emission, and molecular photon upconversion.

8 citations


Posted ContentDOI
12 May 2020-ChemRxiv
TL;DR: In this paper, the authors investigated the origin of chiroptical effects in achiral polymers blended with a chiral small-molecule additive (1-aza[6]helicene) and intrinsically chiral-sidechain polymers using a combination of spectroscopic methods and structural probes.
Abstract: Polymer thin films that emit and absorb circularly polarised light have been demonstrated with the promise of achieving important technological advances; from efficient, high-performance displays, to 3D imaging and all-organic spintronic devices. However, the origin of the large chiroptical effects in such films has, until now, remained elusive. We investigate the emergence of such phenomena in achiral polymers blended with a chiral small-molecule additive (1-aza[6]helicene) and intrinsically chiral-sidechain polymers using a combination of spectroscopic methods and structural probes. We show that – under conditions relevant for device fabrication – the large chiroptical effects are caused by coupling of electric and magnetic transition dipole moments (natural optical activity), not structural chirality as previously assumed, and may occur because of local order in a cylinder blue phase-type organisation. This disruptive mechanistic insight into chiral polymer thin films will offer new approaches towards chiroptical materials development after almost three decades of research in this area.

2 citations