S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Journal ArticleDOI
Properties of silicon dioxide films deposited at low temperatures by microwave plasma enhanced decomposition of tetraethylorthosilicate
TL;DR: In this paper, the effects of the presence of oxygen in the discharge in film deposition rate, mechanism, and physical properties of the films have been investigated, and structural characterization of the deposited films has been carried out by etch rate measurements, infrared transmission spectra, x-ray photoelectron spectroscopy, Auger, and secondary ion mass spectrometry analyses.
Journal ArticleDOI
Novel silicon compatible p-WS2 2D/3D heterojunction devices exhibiting broadband photoresponse and superior detectivity
TL;DR: A comparative study of the reported results on 2D transition metal chalcogenides indicates the superior characteristics of WS2/n-Si heterostructures for future photonic devices.
Journal ArticleDOI
Two‐Dimensional Piezoelectric MoS2‐Modulated Nanogenerator and Nanosensor Made of Poly(vinlydine Fluoride) Nanofiber Webs for Self‐Powered Electronics and Robotics
Kuntal Maity,Biswajit Mahanty,Tridib Kumar Sinha,Samiran Garain,Anirban Biswas,Sujoy Kumar Ghosh,Smarajit Manna,Samit K. Ray,Dipankar Mandal +8 more
TL;DR: In this paper, an ultrasound sensitive piezoelectric nanogenerator (PNG) made of a few layers of 2'D-MoS2-incorporated electrospun poly(vinlydine fluoride) (PVDF) nanofiber webs (NFW) is described for the first time.
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Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity
TL;DR: The fabrication and optical response of boron-doped single silicon nanowire-based metal-semiconductor-metal photodetector with peak responsivity in the near-infrared region is reported and the observed photoresponse is sensitive to the polarization of exciting light source, allowing the device to act as a polarization-dependent near-Infrared photodetsector.
MonographDOI
Strained silicon heterostructures : materials and devices
TL;DR: This chapter discusses the properties of Alloy Layers, Si/SiGe Optoelectronics, BICFET, RTD and Other Devices, and MODFETs.