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Samit K. Ray

Researcher at Indian Institute of Technology Kharagpur

Publications -  542
Citations -  9698

Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.

Papers
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Schottky diode characteristics of Ti on strained-Si

Sanatan Chattopadhyay, +6 more
- 01 Dec 1997 - 
TL;DR: The Schottky barrier height and ideality factor of p-type strained-Si (grown on a graded relaxed Si0.82Ge0.18 buffer layer) were investigated in the temperature range 200-300 K using the currentvoltage (I-V) characteristics and were found to be temperature dependent.
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Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.

Ajit K. Katiyar, +6 more
- 23 Sep 2016 - 
TL;DR: Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactants.
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Emission characteristics of self-assembled strained Ge1-xSnx islands for sources in the optical communication region.

Rajshekhar Bar, +3 more
- 29 Jun 2017 - 
TL;DR: The observed electroluminescence in p-i-n devices fabricated on Ge1-x Sn x island samples above a threshold bias of 4 V makes them attractive for future Si based optical devices.
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Facile and time-resolved chemical growth of nanoporous CaxCoO2 thin films for flexible and thermoelectric applications

Tridib Kumar Sinha, +4 more
- 05 Apr 2019 - 
TL;DR: In this paper, the authors demonstrate a time resolved, facile and ligand-free soft chemical method for the growth of nanoporous Ca0.35CoO2 thin films on sapphire and mica substrates from a water-based precursor ink, composed of in-situ prepared Ca2+DMF and Co2+-DMF complexes.
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Solution-Processed Black-Si/Cu2ZnSnS4 Nanocrystal Heterojunctions for Self-Powered Broadband Photodetectors and Photovoltaic Devices

Sudarshan Singh, +4 more
TL;DR: For the first time, the fabrication of n-black Si (B-Si)/p-Cu2ZnSnS4 nanocrystal (CZTS NC) heterojunctions was reported in this article.