S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
More filters
Journal ArticleDOI
ZrO2 as a high-K dielectric for strained SiGe MOS devices
TL;DR: The potential of ZrO2 thin film as a high-K gate dielectric for scaled MOSFET devices has been studied in this article, where an equivalent oxide thickness of < 20 A with a leakage current of the order of 10-4 A/cm2 at 1 V has been obtained.
Journal ArticleDOI
Solvent-engineered performance improvement of graphene quantum dot sensitized solar cells with nitrogen functionalized GQD photosensitizers
TL;DR: In this article , the authors reported that the choice of solvent used in the synthesis of nitrogen-doped graphene quantum dots (N-GQDs) has a significant effect on the photovoltaic performance of quantum dot sensitized solar cells.
Journal ArticleDOI
Flexible Biomechanical Energy Harvesters with Colossal Piezoelectric Output (∼2.07 V/kPa) Based on Transition Metal Dichalcogenides-Poly(vinylidene fluoride) Nanocomposites
TL;DR: In this article, a simple and scalable technique is reported to demonstrate self-poled, flexible and superior performance piezoelectric nanogenerators by using chemically exfoliated layered MoS2 nanosheets embedded in a self-sharpened polysilicon.
Journal ArticleDOI
Low-temperature deposition of silicon oxide films by microwave plasma CVD of TEOS
TL;DR: In this article, silicon dioxide films on silicon have been deposited by microwave plasma-enhanced MOCVD process using TEOS and oxygen and structural characterisation of the films have been carried out by measurements of refractive index and etch rate and analysis of IR absorption and X-ray photoelectron spectra.
Journal ArticleDOI
Interfacial and electrical properties of SrBi2Ta2O9/ZrO2/Si heterostructures for ferroelectric memory devices
TL;DR: In this paper, the interfacial and frequency dependent electrical properties of metal-ferroelectric insulator-semiconductor capacitors with SrBi2Ta2O9 (SBT) ferroelectric films grown on ZrO2 buffer layer coated Si were investigated.