Samit K. Ray

TL;DR: In this paper, Ferroelectric SrBi 2 Ta 2 O 9 (SBT) thin films were grown on p-type Si substrates by radio frequency sputtering technique and the crystallinity of the films were studied using grazing incidence X-ray diffraction pattern.

TL;DR: In this paper, the morphology, atomic structure, and chemical composition of small (4nm average height and 20nm average diameter), dense capped MBE-grown Ge/Si quantum dots are studied using an energy-differential extension of the direct X-ray phasing method, COBRA.

TL;DR: In this article, the growth of self assembled non-polar high indium clusters of In0.55Ga0.45N over nonpolar (11-20) a-plane In 0.17Ga 0.83N epilayer grown on a plane (11 -20)GaN/(1-102) r-plane sapphire substrate using plasma assisted molecular beam epitaxy (PAMBE).

TL;DR: In this article, Indium Tin Oxide (ITO) coated glass was taken as the basic substrate for sensing layer deposition and sensitivity tests for relative humidity (RH) measurements were carried out at five different concentrations of humid air at room temperature.

TL;DR: Pseudomorphic Si-Si Raman mode vibrations on strain and composition of binary and ternary alloys have been explained with experimental and theoretically calculated results as mentioned in this paper, where the Hall hole mobility is found to increase with decreasing compressive strain or effective Ge content in the layer throughout the temperature range of 120-300 K.