scispace - formally typeset
S

Samit K. Ray

Researcher at Indian Institute of Technology Kharagpur

Publications -  542
Citations -  9698

Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.

Papers
More filters
Journal ArticleDOI

Electrical properties of oxides grown on strained Si using microwave N2O plasma

TL;DR: In this paper, the electrical properties of grown oxide have been characterized using a metal-oxide-semiconductor structure, and the oxide on strained-Si samples has exhibited hole trapping behavior and moderately low interface state generation on constant current stressing.
Journal ArticleDOI

Broadband pump-probe study of biexcitons in chemically exfoliated layered WS$_{2}$

TL;DR: In this article, a detailed time-resolved investigation provides ultrafast radiative and non-radiative lifetimes of excitons and biexcitons in WS$2.
Journal ArticleDOI

Determination of interface state density of PtSi/strained-Si1-xGex/Si Schottky diodes

TL;DR: In this paper, Schottky barrier diodes have been fabricated and characterized for the determination of barrier height, ideality factor and the interface state density distribution with energy, having an epitaxial layer thickness of 20 and 52 nm.
Journal ArticleDOI

Oxidation kinetics of degradation of 1,4-dioxane in aqueous solution by H2O2/Fe(II) system

TL;DR: A kinetic model is proposed for the oxidation of 1,4-dioxane by Fenton reagent and this model is applied to calculate the kinetic rate constant for the reaction between hydroxyl radicals and 1, 4 dioxane.
Journal ArticleDOI

Optical property modification of ZnO: Effect of 1.2 MeV Ar irradiation

TL;DR: In this article, a systematic study on 1.2 MeV Ar8+ irradiated ZnO by X-ray diffraction (XRD), room temperature photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption measurements was performed.