S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Journal ArticleDOI
Temperature- and Time-Dependent Shape Transformation of ZnO Nanostructures Grown by Vapor–Solid Method
Journal ArticleDOI
Capacitance study of selectively doped SiGe/Si heterostructures
TL;DR: Capacitance studies of Si/Si1?xGex/Si heterostructures with three Si1?XGex layers selectively doped with boron are presented in this article.
Journal ArticleDOI
Deep-level spectroscopy studies of confinement levels in SiGe quantum wells
Irina V. Antonova,E. P. Neustroev,Svetlana A. Smagulova,Miron S. Kagan,Pavel S. Alekseev,Samit K. Ray,N. Sustersic,James Kolodzey +7 more
TL;DR: In this article, the recharging of quantum confinement levels in SiGe quantum wells (QWs) was studied by charge deep-level transient spectroscopy (Q-DLTS) for Si/SiGe/Si structures with different Ge contents in the SiGe layer.
Proceedings ArticleDOI
Formation of Ge-based nanowires for nanoelectronic applications by vapor-liquid-solid mechanism
TL;DR: Using vapour-liquid-solid mechanism, the authors has grown Ge and composition modulated Ge:SnO2 nanowires on gold-coated silicon substrates with diameter distribution ranging from 30-100 nm, and length more than tens of micrometers.
multifunctional ceramics with tunable photoluminescence and magnetic properties
TL;DR: In this paper, the Gibb free energy approach was used to find the dominant homogeneous mechanism for particle growth in multiferroic ceramics, where the chemical substitution of a trivalent ion (Bi 3C ) by a divalent ion (Sr 2C ) causes the transformation of certain fraction of Fe 3C to Fe 4C and/or the appearance of oxygen vacancies.