S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Stress, texture and microstructure of zirconium thin films probed by X-ray diffraction
TL;DR: In this article, anisotropic broadening of diffraction lines has been observed for all thin Zirconium films when probed by X-ray diffraction, showing fiber texture as dominant texture component.
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Effect of Al concentration in grain and grain boundary region of Al-doped ZnO films: a dielectric approach
TL;DR: In this article, the structural, electrical and optical properties of aluminium-doped zinc oxide (ZnO : Al) films have been studied as a function of Al concentration and the optical band gap is observed to follow a Burstein-Moss shift with the increase in the concentration of Al doping.
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Electroluminescence and charge storage characteristics of quantum confined germanium nanocrystals
Samaresh Das,R. K. Singha,Anindya Sundar Dhar,Samit K. Ray,Aleksei Anopchenko,Nicola Daldosso,Lorenzo Pavesi +6 more
TL;DR: In this article, quantum confined Ge nanocrystals embedded in high bandgap and high-k dielectric matrix have been synthesized to demonstrate dual functional devices using Si-compatible fabrication technology.
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Terahertz emission from electrically pumped gallium doped silicon devices
P.-C. Lv,R. T. Troeger,Sangcheol Kim,Samit K. Ray,Keith W. Goossen,James Kolodzey,Irina Yassievich,M. A. Odnoblyudov,Miron S. Kagan +8 more
TL;DR: In this paper, a Ga impurity transition was attributed to the radiative transitions of holes from the split sublevels of the 1Γ8 excited state to the sub-levels of 1 Γ8+ ground state, yielding an energy separation of 22±0.07meV between the two ground states.
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Properties of sige oxides grown in a microwave oxygen plasma
TL;DR: In this article, thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150-200°C).