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Samit K. Ray

Researcher at Indian Institute of Technology Kharagpur

Publications -  542
Citations -  9698

Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.

Papers
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Journal ArticleDOI

Effect of reactive‐ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion‐beam sputtering

Samit K. Ray, +4 more
- 15 Jun 1994 - 
TL;DR: In this article, a dual ion-beam sputtering technique was employed to control the composition of silicon oxynitride and silicon nitride films at low temperatures (150-200°C).
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Improved charge injection characteristics of Ge nanocrystals embedded in hafnium oxide for floating gate devices

Samaresh Das, +4 more
- 07 Dec 2007 - 
TL;DR: In this paper, a metal-oxide-semiconductor capacitors with a trilayer structure consisting of Ge+HfO2 layers sandwiched between HfO 2 tunnel and cap oxides were fabricated on p-Si substrates.
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Structural and impedance spectroscopy of pseudo-co-ablated (SrBi2Ta2O9)(1−x)–(La0.67Sr0.33MnO3)x composites

Sarmistha Maity, +2 more
- 09 Mar 2011 - 
TL;DR: In this paper, composite thin films of (SrBi2Ta2O9)(1?x)?(La0.67Sr0.33MnO3)x are prepared for the first time using the pulsed-laser deposition technique with ablation occurring from two individual targets.
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Photoluminescence properties of Eu3+-doped barium strontium titanate (Ba, Sr) TiO3 ceramics

C. B. Samantaray, +4 more
- 01 Jul 2004 - 
TL;DR: In this paper, the photoluminescence properties of doped samples were investigated at room temperature using X-ray diffraction and scanning electron microscopy, and the structural difference between doped and non-doped samples accounts for the intensification of the luminescence intensity.
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Electrical and interfacial characteristics of ultrathin ZrO2 gate dielectrics on strain compensated SiGeC/Si heterostructure

Rajat Mahapatra, +8 more
- 02 Apr 2003 - 
TL;DR: In this paper, trathin ZrO2 gate dielectrics have been deposited on strain-compensated Si0.69Ge0.3C0.01 layers by rf magnetron sputtering.