S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Effect of deposition temperature on the microstructure and electrical properties of Ba0.8Sr0.2TiO3 thin films deposited by radio-frequency magnetron sputtering
TL;DR: In this paper, nanocrystalline thin films were deposited on n-type silicon substrates by radio-frequency magnetron sputtering technique at various deposition temperatures and X-ray diffraction confirmed that the deposited BST films were polycrystalline possibly due to recrystallization.
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Plasmon mediated enhancement and tuning of optical emission properties of two dimensional graphitic carbon nitride nanosheets
TL;DR: It is proposed that the π*→π transition in g-C3N4 can trigger surface plasmon oscillation in Au, which subsequently increases the excitation process in the nanosheets and results in enhanced emission in the green region of the photoluminescence spectrum.
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WS2 Nanosheet/Si p–n Heterojunction Diodes for UV–Visible Broadband Photodetection
Suparna Pal,Suparna Pal,Subhrajit Mukherjee,Ravindra Jangir,Ravindra Jangir,Mangla Nand,Mangla Nand,Dipankar Jana,Satish Kumar Mandal,Satyaban Bhunia,Satyaban Bhunia,C. Mukherjee,C. Mukherjee,Shambhu Nath Jha,Shambhu Nath Jha,Samit K. Ray,Samit K. Ray +16 more
TL;DR: In this article, a continuous transition-metal dichalcogenide (TMD) thin film with large-area coverage is proposed to address the growing demand for high quality TMD thin films.
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Metal-oxide-semiconductor structure with Ge nanocrystals for memory devices applications
TL;DR: In this paper, a metal-oxide-semiconductor structure with germanium nanocrystals embedded in the oxide matrix has been fabricated by rf sputtering followed by rapid thermal annealing.
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Size dependent photoresponse characteristics of crystalline Ge quantum dots based photodetectors
TL;DR: In this article, the size dependent photoresponse behavior of crystalline Ge quantum dots (QDs) dispersed within the silica matrix was investigated and the effect of Coulomb interaction of photogenerated carriers, QD/silica interface defects and electric field driven carrier separation and tunneling through the oxide barriers.