S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
Papers
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Effect of growth temperature and post-growth annealing on luminescence properties of molecular beam epitaxy grown single layer Ge quantum dots
TL;DR: In this paper, the structural and luminescence properties of Si-embedded single layer Ge nanoislands grown via molecular beam epitaxy using Stranski-Krastanov mechanism were investigated.
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Series resistance and mobility degradation factor in C-incorporated SiGe heterostructure p-type metal–oxide semiconductor field-effect transistors
TL;DR: In this paper, the authors have fabricated p-type metaloxide semiconductor field effect transistor (p-MOSFET) devices with channel lengths from 0.8-10 μm on strained Si/Si0.793Ge0.2C0.007 devices over the temperature range of 300-77 K.
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High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed-Dimensional (2D-0D) Heterostructure.
S. Mukherjee,D. Bhattacharya,Suman Patra,Sanjukta Paul,Rajib Kumar Mitra,Priya Mahadevan,Atindra Nath Pal,Samit K. Ray +7 more
TL;DR: In this paper , a superlarge (∼0.75 mm2), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS2 QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication).
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Low-temperature deposition of dielectric films by microwave plasma enhanced decomposition of hexamethyldisilazane
TL;DR: In this article, the authors used hexamethyldisilazane (HMDS) as an organosilicon source for the deposition of dielectric films at low temperatures (200-250° C) by microwave plasma enhanced CVD technique.
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Nitrogen vacancy and hydrogen substitution mediated tunable optoelectronic properties of g-C3N4 2D layered structures: Applications towards blue LED to broad-band photodetection
Arnab Ghosh,Arnab Ghosh,Himanshu Saini,Arijit Sarkar,Puspendu Guha,Aneeya K. Samantara,Aneeya K. Samantara,Ranjit Thapa,Suman Mandal,Ajoy Mandal,J. N. Behera,J. N. Behera,Samit K. Ray,Dipak K. Goswami +13 more
TL;DR: In this paper, two variants of graphitic carbon nitride (g-C3N4) were synthesized with modified optical/electronic properties while keeping its basic structural framework.