S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Effect of nickel incorporation on microstructural and optical properties of electrodeposited diamond like carbon (dlc) thin films
TL;DR: In this paper, a simple electrodeposition technique was used to synthesize diamond like carbon (DLC) and nickel incorporated diamond-like carbon thin films on ITO-coated glass substrates.
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Electrical properties of oxides grown on strained sige layer at low temperatures in a microwave oxygen plasma
TL;DR: In this article, x-ray photoelectron spectroscopy was used to investigate the formation of single phase mixed oxides consisting a SiO2 and GeO2, without any Ge pileup on the surface or at the substrate oxide interface.
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Temperature dependent photoluminescence characteristics of nanocrystalline ZnO films grown by sol–gel technique
TL;DR: In this paper, the structural and optical properties of nanocrystalline ZnO thin films were investigated using photoluminescence spectra, with hexagonal shaped particles of size 30-35nm grown on p-Si (100) substrates by sol-gel technique.
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Nanostructures of Sr2+ doped BiFeO3 multifunctional ceramics with tunable photoluminescence and magnetic properties.
Satish Kumar Mandal,T. Rakshit,Samit K. Ray,Sanjay Kumar Mishra,P. S. R. Krishna,Amreesh Chandra +5 more
TL;DR: Careful tuning of formation (calcination) temperature of Sr(2+) doped BiFeO(3) multiferroic ceramics results in tailorable particle morphologies ranging from spherical to pillar-like, which results in magnetism similar to ferromagnetic materials.
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Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study
TL;DR: In this article, a comparative study of the electrical properties of some oxides e.g., Gd2O3, GdO, Ga2O 3, Ga 2O3(GdO3)/SiGe sample showed a significant amount of Ga and Gd O along with Ga and gd signals. And the positive fixed oxide charge and interface state density were found to be 8.4×1010 cm−2 and 4.8×1011 eV−1