S
Samit K. Ray
Researcher at Indian Institute of Technology Kharagpur
Publications - 542
Citations - 9698
Samit K. Ray is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 44, co-authored 507 publications receiving 8085 citations. Previous affiliations of Samit K. Ray include University of Delaware & Indian Institute of Technology Kanpur.
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Electron beam deposited lead‐lanthanum‐zirconate‐titanate thin films for silicon based device applications
TL;DR: In this paper, a simple single source electron-beam evaporation technique has been used for the deposition of lead-lanthanum-zirconate-titanate (PLZT) thin films for silicon-based device applications.
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2D WS2 embedded PVDF nanocomposites for photosensitive piezoelectric nanogenerators with a colossal energy conversion efficiency of ∼25.6%
TL;DR: In this article, a self-poled piezo-phototronic device using composites of polyvinylidene fluoride (PVDF) and chemically exfoliated tungsten disulfide (WS2) nanosheets is presented.
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Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors.
John Wellington John,Veerendra Dhyani,Sudarshan Singh,Alka Jakhar,Arijit Sarkar,Samaresh Das,Samit K. Ray,Samit K. Ray +7 more
TL;DR: In this paper, a CMOS-compatible infrared (IR; 1200-1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented.
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Optical characteristics of Er3+-doped Ge nanocrystals in sol–gel-derived SiO2 glass
TL;DR: In this article, Er3+ ions of controlled composition were incorporated into the SiO2 glasses to investigate the emission properties of the 1.54 µm line, where the size of the Ge nanocrystals varied from 5 to 10 nm.
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Flexible and transparent nanocrystal floating gate memory devices using silk protein
TL;DR: In this paper, a floating gate memory using carbon nanotube-CdS nanostructures embedded in Bombyx mori silk protein matrix has been demonstrated, where the enhanced charge injection resulting in increase in memory window is observed at higher sweeping voltages.