Journal ArticleDOI
Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
Thirumaleshwara N. Bhat,Mahesh Kumar,Mohana K. Rajpalke,Basanta Roul,S. B. Krupanidhi,Neeraj Sinha +5 more
TLDR
In this article, the authors determined the band offsets in InN/p-Si heterojunctions by high-resolution x-ray photoemission spectroscopy, finding that the valence band of InN is 1.39 eV below that of Si.Abstract:
The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.read more
Citations
More filters
Journal ArticleDOI
Determination of band offsets at GaN/single-layer MoS2 heterojunction
Malleswararao Tangi,Pawan Mishra,Tien Khee Ng,Mohamed N. Hedhili,Bilal Janjua,Mohd Sharizal Alias,Dalaver H. Anjum,Chien Chi Tseng,Yumeng Shi,Hannah J. Joyce,Lain-Jong Li,Boon S. Ooi +11 more
TL;DR: In this paper, the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure were determined by high-resolution X-ray photoelectron spectroscopy.
Journal ArticleDOI
Band Alignment at GaN/Single-Layer WSe2 Interface
Malleswararao Tangi,Pawan Mishra,Chien-Chih Tseng,Tien Khee Ng,Mohamed N. Hedhili,Dalaver H. Anjum,Mohd Sharizal Alias,Nini Wei,Lain-Jong Li,Boon S. Ooi +9 more
TL;DR: The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
Journal ArticleDOI
Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Journal ArticleDOI
Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well
Malleswararao Tangi,Pawan Mishra,Ming-Yang Li,Mohammad Khaled Shakfa,Dalaver H. Anjum,Mohamed N. Hedhili,Tien Khee Ng,Lain-Jong Li,Boon S. Ooi +8 more
TL;DR: In this article, the valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices.
Journal ArticleDOI
Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction
TL;DR: In this paper, a MoS2/Si heterojunction was fabricated by exfoliating MoS 2 on top of the silicon substrate, and a type-II band alignment was determined for the transport of photoexcited carriers.
References
More filters
Journal ArticleDOI
Intrinsic electron accumulation at clean InN surfaces.
TL;DR: An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN, which produces charged donor-type surface states with associated downward band bending.
Journal ArticleDOI
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
TL;DR: In this article, Ohmic and Schottky properties of metal/germanium (Ge) junction have been investigated and it has been shown that Fermi level at metal/Ge interface is intrinsically pinned at the charge neutrality level (CNL) characterized by the metal-induced gap states model.
Journal ArticleDOI
RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
TL;DR: In this paper, a detailed study of RF-MBE growth conditions for obtaining high-quality InN films is presented, showing that the fundamental band gap of InN is about 0.8 eV.
RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
TL;DR: In this article, a detailed study of RF-MBE growth conditions for obtaining high-quality InN films is presented, and the full widths at half maximum (FWHMs) of ω-mode X-ray diffraction (XRD), ω 2θ mode XRD and E2 (highfrequency)phonon-mode peaks in the Raman scattering spectrum of the grown layer were 236.7 arcsec, 28.9 arcsec and 3.7 cm -1, respectively.
Journal ArticleDOI
Effects of the narrow band gap on the properties of InN
Junqiao Wu,Junqiao Wu,Wladek Walukiewicz,W. Shan,Kin Man Yu,Joel W. Ager,Eugene E. Haller,Eugene E. Haller,Hai Lu,William J. Schaff +9 more
TL;DR: In this article, infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy, and the results showed a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN.