Journal ArticleDOI
Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
Thirumaleshwara N. Bhat,Mahesh Kumar,Mohana K. Rajpalke,Basanta Roul,S. B. Krupanidhi,Neeraj Sinha +5 more
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In this article, the authors determined the band offsets in InN/p-Si heterojunctions by high-resolution x-ray photoemission spectroscopy, finding that the valence band of InN is 1.39 eV below that of Si.Abstract:
The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.read more
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Determination of band offsets at the Al:ZnO/Cu2SnS3 interface using X-ray photoelectron spectroscopy
Sandra Dias,S. B. Krupanidhi +1 more
TL;DR: In this paper, the structural and optical properties of the semiconductor materials were studied and the band offset at the Al:ZnO/Cu2SnS3 heterojunction was studied using X-ray photoelectron spectroscopy technique.
Journal ArticleDOI
Electrical transport modulation of VO2/Si(111) heterojunction by engineering interfacial barrier height
Basanta Roul,Basanta Roul,Deependra Kumar Singh,Rohit Pant,Arun Malla Chowdhury,Arun Malla Chowdhury,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: In this article, the authors present a detailed report on the modulation in the electrical properties of VO2/Si heterostructures by application of an external electrical field across VO2 thin films.
Journal ArticleDOI
Visualization of band offsets at few-layer MoS2/Ge heterojunction.
TL;DR: In this paper, a wafer-scale highly crystalline few atomic layers MoS2film was fabricated using sputtering and post sulfurization process in a sulfur-rich environment.
Journal ArticleDOI
Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation.
Christoph Janowitz,Ali Mahmoodinezhad,Małgorzata Kot,Carlos Morales,Franziska Naumann,Paul Plate,Marvin Hartwig Zoellner,Florian Bärwolf,David Stolarek,Christian Wenger,Karsten Henkel,Jan Ingo Flege +11 more
TL;DR: In this paper , an Al2O3/ZnO heterojunction was grown on a Si single crystal substrate by subsequent thermal and plasma-assisted atomic layer deposition (ALD) in situ.
Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application
TL;DR: In this article, a growth phase diagram of III-Nitride semiconductor nanowires on silicon using plasma assisted molecular beam epitaxy is developed, and structural and optical characteristics are mapped as a function of growth parameters.
References
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Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
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Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
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Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
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Transient electron transport in wurtzite GaN, InN, and AlN
TL;DR: In this paper, the authors compared the acceleration and velocity overshoot in wurtzite GaN, InN, and AlN compared with that which occurs in GaAs.