Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
TL;DR: In this article, the authors determined the band offsets in InN/p-Si heterojunctions by high-resolution x-ray photoemission spectroscopy, finding that the valence band of InN is 1.39 eV below that of Si.
Abstract: The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.
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