Journal ArticleDOI
Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
Thirumaleshwara N. Bhat,Mahesh Kumar,Mohana K. Rajpalke,Basanta Roul,S. B. Krupanidhi,Neeraj Sinha +5 more
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In this article, the authors determined the band offsets in InN/p-Si heterojunctions by high-resolution x-ray photoemission spectroscopy, finding that the valence band of InN is 1.39 eV below that of Si.Abstract:
The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.read more
Citations
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Determination of band offsets at GaN/single-layer MoS2 heterojunction
Malleswararao Tangi,Pawan Mishra,Tien Khee Ng,Mohamed N. Hedhili,Bilal Janjua,Mohd Sharizal Alias,Dalaver H. Anjum,Chien Chi Tseng,Yumeng Shi,Hannah J. Joyce,Lain-Jong Li,Boon S. Ooi +11 more
TL;DR: In this paper, the band alignment parameters of the GaN/single-layer (SL) MoS2 heterostructure were determined by high-resolution X-ray photoelectron spectroscopy.
Journal ArticleDOI
Band Alignment at GaN/Single-Layer WSe2 Interface
Malleswararao Tangi,Pawan Mishra,Chien-Chih Tseng,Tien Khee Ng,Mohamed N. Hedhili,Dalaver H. Anjum,Mohd Sharizal Alias,Nini Wei,Lain-Jong Li,Boon S. Ooi +9 more
TL;DR: The band alignment parameters determined here provide a route toward the integration of group III nitride semiconducting materials with transition metal dichalcogenides (TMDs) for designing and modeling of their heterojunction-based electronic and optoelectronic devices.
Journal ArticleDOI
Binary group III-nitride based heterostructures: band offsets and transport properties
Basanta Roul,Basanta Roul,Mahesh Kumar,Mahesh Kumar,Mohana K. Rajpalke,Thirumaleshwara N. Bhat,S. B. Krupanidhi +6 more
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Journal ArticleDOI
Type-I band alignment at MoS2/In0.15Al0.85N lattice matched heterojunction and realization of MoS2 quantum well
Malleswararao Tangi,Pawan Mishra,Ming-Yang Li,Mohammad Khaled Shakfa,Dalaver H. Anjum,Mohamed N. Hedhili,Tien Khee Ng,Lain-Jong Li,Boon S. Ooi +8 more
TL;DR: In this article, the valence and conduction band offsets (VBO and CBO) at the semiconductor heterojunction are crucial parameters to design the active region of contemporary electronic and optoelectronic devices.
Journal ArticleDOI
Determination of band alignment at two-dimensional MoS2/Si van der Waals heterojunction
TL;DR: In this paper, a MoS2/Si heterojunction was fabricated by exfoliating MoS 2 on top of the silicon substrate, and a type-II band alignment was determined for the transport of photoexcited carriers.
References
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Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
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Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
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Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
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Transient electron transport in wurtzite GaN, InN, and AlN
TL;DR: In this paper, the authors compared the acceleration and velocity overshoot in wurtzite GaN, InN, and AlN compared with that which occurs in GaAs.