Journal ArticleDOI
Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy
Thirumaleshwara N. Bhat,Mahesh Kumar,Mohana K. Rajpalke,Basanta Roul,S. B. Krupanidhi,Neeraj Sinha +5 more
TLDR
In this article, the authors determined the band offsets in InN/p-Si heterojunctions by high-resolution x-ray photoemission spectroscopy, finding that the valence band of InN is 1.39 eV below that of Si.Abstract:
The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.read more
Citations
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Journal ArticleDOI
Comparative studies on photovoltaic performance of InN nanostructures/p-Si(100) heterojunction devices grown by molecular beam epitaxy
Thirumaleshwara N. Bhat,Mohana K. Rajpalke,Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,S. B. Krupanidhi +6 more
TL;DR: In this paper, the performance of the photovoltaic devices with dissimilar shapes of the InN nanostructures fabricated on p-Si (100) was compared to the devices fabricated with the nanorods.
Dissertation
High performance floating gate memories using graphene as charge storage medium and atomic layer deposited high-k dielectric layers as tunnel barrier
TL;DR: In this article, materials science and nanotechnology program of the Graduate School of Engineering and Science of Bilkent Univerity of Turkey have been used for research in the area of Materials Science and Nanotechnology.
Journal ArticleDOI
The band offset, Half-metallic and optical behavior in the CrSb/KCl [0 0 1] interface: By DFT calculation
TL;DR: In this article, the half-metallic, optical and band offsets properties of CrSb/KCl [0,0,1] interface have been calculated within the density functional theory (DFT) framework using FP-LAPW+lo method.
References
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Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
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Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
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Transient electron transport in wurtzite GaN, InN, and AlN
TL;DR: In this paper, the authors compared the acceleration and velocity overshoot in wurtzite GaN, InN, and AlN compared with that which occurs in GaAs.