Journal ArticleDOI
Characterization and Modeling of Atomic Layer Deposited High-Density Trench Capacitors in Silicon
Marion K. Matters-Kammerer,K. B. Jinesh,Th. G. S. M. Rijks,Fred Roozeboom,Johan Hendrik Klootwijk +4 more
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TLDR
A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented in this paper, where it is shown that in situ ozone annealing of the Al 2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage.Abstract:
A detailed electrical analysis of multiple layer trench capacitors fabricated in silicon with atomic-layer-deposited Al2O3 and TiN is presented. It is shown that in situ ozone annealing of the Al2O3 layers prior to the TiN electrode deposition significantly improves the electric properties of the devices such as the dielectric constant, leakage current, and the breakdown voltage of the devices. The self-inductance and self-resistance of the capacitors as derived from S-parameter measurements up to 10 GHz are very small, as low as 4 pH and 6 mΩ for 19.1 mm2 electrode surface. These data are shown to be consistent with a theoretical model.read more
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Proceedings ArticleDOI
Pathways to mm-scale DC-DC converters: Trends, opportunities, and limitations
TL;DR: This paper reviews and discusses some of the fundamental tradeoffs and future prospects for high-density passive components, active devices, and circuit architectures that show promise in the direction of monolithic or mm-scale power conversion.
Proceedings ArticleDOI
Characterization, modeling and optimization of 3D embedded trench decoupling capacitors in Si-RF interposer
Helene Jacquinot,David Denis +1 more
TL;DR: In this paper, a scalable 1 MHz-10 GHz wideband model of a 3D capacitor in the 100 pF-10 nF range is developed and 3D electromagnetic simulations of substrate and capacitive coupling between 3D capacitors using guard ring are presented.
Journal ArticleDOI
The Effect of Different Dielectric Materials in Designing High-Performance Metal-Insulator-Metal (MIM) Capacitors
TL;DR: In this article, the effect of different dielectric constants (k ) to the performance of the MIM capacitors is also studied, whereas this work investigates the effect that using low- k and high- k dielectrics materials.
Proceedings ArticleDOI
Novel structure of deep trench capacitor with higher breakdown and higher capacitance density for Low Dropout Voltage regulator
TL;DR: In this article, a novel structure of deep trench capacitor with breakdown voltage of 10V and capacitance density of 527nF/mm2, serving for Low Dropout Voltage regulator in IC power management is presented using 3D and 2D Sentaurus Synopsys simulation, with RIE etching and high quality LPCVD is deployed on the equivalent process.
Journal ArticleDOI
Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment
Aude Lefevre,Delphine Ferreira,Marc Veillerot,Jean-Paul Barnes,Guy Parat,Malte Czernohorsky,Florent Lallemand +6 more
TL;DR: In this article, the impact of the deposition process and post-treatment condition on the MIM capacitor's breakdown voltage was studied and correlated with time of flight-secondary ion mass spectrometry (ToF-SIMS).
References
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
TL;DR: Al2O3 films with thicknesses ranging from 30 to 3540 A were grown in a viscous flow reactor using ALD with trimethylaluminum and water as the reactants as mentioned in this paper.
Journal ArticleDOI
Conduction in thin dielectric films
TL;DR: Conduction through thin dielectric films sandwiched between metal and semiconductor electrodes is reviewed in this article, where the authors show that the dielectrics can be used to conduct the circuit.
Journal ArticleDOI
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Jan Benick,Bram Hoex,M.C.M. van de Sanden,Wilhelmus Mathijs Marie Kessels,O. Schultz,Stefan W. Glunz +5 more
TL;DR: In this paper, negative charge dielectric Al2O3 was applied as surface passivation layer on high-efficiency n-type silicon solar cells, achieving a confirmed conversion efficiency of 23.2% on B-doped emitters.