Journal ArticleDOI
Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces
S.C. Sun,James D. Plummer +1 more
TLDR
An extensive set experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures are presented and empirical equations are developed which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions.Abstract:
Accurate modeling of MOS devices requires quantitative knowledge of carrier mobilities in surface inversion and accumulation layers. Optimization of device structures and accurate circuit simulation, particularly as technologies push toward fundamental limits, necessitate an understanding of how impurity doping levels, oxide charge densities, process techniques, and applied electric fields affect carrier surface nobilities. It is the purpose of this paper to present an extensive set of experimental results on the behavior of electron surface mobility in thermally oxidized silicon structures. EmpiricaI equations are developed which allow the calculation of electron mobility under a wide variety of substrate, process, and electrical conditions. The experimental results are interpreted in terms of the dominant physical mechanisms responsible for mobility degradation at the Si/SiO/sub 2/ interface. From the observed effects of process parameters on mobility roll-off under high vertical fields, conclusions are drawn about optimum process conditions for maximizing mobility. The implications of this work for performance limits of several types of MOS devices are described.read more
Citations
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Journal ArticleDOI
Label-free immunodetection with CMOS-compatible semiconducting nanowires
Eric Stern,James F. Klemic,David A. Routenberg,Pauline N. Wyrembak,Daniel B. Turner-Evans,Andrew D. Hamilton,David A. LaVan,Tarek M. Fahmy,Mark A. Reed +8 more
TL;DR: This work reports an approach that uses complementary metal oxide semiconductor (CMOS) field effect transistor compatible technology and hence demonstrates the specific label-free detection of below 100 femtomolar concentrations of antibodies as well as real-time monitoring of the cellular immune response.
Journal ArticleDOI
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges
Jeffrey Y. Tsao,Srabanti Chowdhury,Mark A. Hollis,Debdeep Jena,N. M. Johnson,Kenneth A. Jones,Robert Kaplar,Siddharth Rajan,C. G. Van de Walle,Enrico Bellotti,C. L. Chua,Ramon Collazo,Michael E. Coltrin,J. A. Cooper,Keith R. Evans,Samuel Graham,Timothy A. Grotjohn,Eric R. Heller,Masataka Higashiwaki,M. S. Islam,P. W. Juodawlkis,Muhammad Asif Khan,Andrew D. Koehler,Jacob H. Leach,Umesh K. Mishra,Robert J. Nemanich,Robert C. N. Pilawa-Podgurski,Jeffrey B. Shealy,Zlatko Sitar,Marko J. Tadjer,Arthur F. Witulski,Michael Wraback,Jerry A. Simmons +32 more
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Journal ArticleDOI
Total ionizing dose effects in MOS oxides and devices
T.R. Oldham,F.B. McLean +1 more
TL;DR: In this article, the basic physical mechanisms of the interactions of ionizing radiation with MOS oxides, including charge generation, transport, trapping and detrapping, and interface trap formation, are discussed.
Journal ArticleDOI
Characterisation and modeling of mismatch in MOS transistors for precision analog design
TL;DR: In this paper, a characterization methodology is presented that accurately predicts the mismatch in drain current over a wide operating range using a minimum set of measured data and the physical causes of mismatch are discussed in detail for both p- and n-channel devices.
Journal ArticleDOI
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung,Chin-Che Tin,John R. Williams,K. McDonald,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Leonard C. Feldman,O. W. Holland,M.K. Das,John W. Palmour +10 more
TL;DR: In this article, the authors demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide.
References
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Journal ArticleDOI
Properties of Semiconductor Surface Inversion Layers in the Electric Quantum Limit
Frank Stern,W. E. Howard +1 more
TL;DR: In this article, the authors generalized the energy-level calculation to include arbitrary orientations of the constant energy ellipsoids in the bulk, the surface or interface, and an external magnetic field.
Journal ArticleDOI
A charge-sheet model of the MOSFET
TL;DR: In this paper, the authors compared the Pao-Sah double-integral model with the charge sheet model for long-channel MOSFETs and found that the charge-sheet model is simpler to extend to two or three dimensions.
Journal ArticleDOI
Effective Carrier Mobility in Surface-Space Charge Layers
TL;DR: In this paper, an effective mobility was obtained from a solution of the Boltzmann equation for two types of potential functions: (a) a linear potential corresponding to a constant space-charge field, and (b) a Poisson's equation including an external bias applied normal to the surface.
Proceedings ArticleDOI
Characterization of the electron mobility in the inverted l100g Si surface
A.G. Sabnis,J.T. Clemens +1 more
TL;DR: In this article, the effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate voltages, and back-bias voltages.
Journal ArticleDOI
Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
TL;DR: In this paper, the field-effect mobility of electrons in inversion layers of Si as functions of the crystalline orientation of the surface and of the azimuthal direction of the current path within the layers is reported.