Proceedings ArticleDOI
Evaluation of device parameters of HfO/sub 2//SiO/sub 2//Si gate dielectric stack for MOSFETs
A. Madan,Shambhunath Bose,P.J. George,Chandra Shekhar +3 more
- pp 386-391
TLDR
HfO/sub 2/ has the potential to satisfy the projected off-state leakage current requirements of future high-performance and low-power technologies.Abstract:
Among the potential candidates for replacement of SiO/sub 2/ or SiO/sub x/N/sub y/ as gate dielectric, HfO/sub 2/ seems to be one of the most promising materials, combining high dielectric permittivity with low leakage current due to a reasonably high barrier height that limits electron tunneling (Peacock and Robertson, 2004). Other requirements on gate dielectric materials like low density of interface states, gate compatibility, structural, physical and chemical stability at both gate electrode/dielectric and dielectric/silicon interfaces are currently making the object of intensive investigation for sub 0.1 /spl mu/m channel length devices using high-k dielectrics. The transition layer becomes important in such dielectrics in deciding the device performance. In this paper, we discuss the scaling limits of HfO/sub 2//SiO/sub 2/ stacked dielectrics taking into consideration the impact of transition layer between HfO/sub 2/ and SiO/sub 2/. In this paper, analysis of HfO/sub 2//SiO/sub 2/ gate dielectric stack has been carried out for replacement of SiO/sub 2/ using an appropriate direct-tunneling gate-current model. It has the potential to satisfy the projected off-state leakage current requirements of future high-performance and low-power technologies.read more
Citations
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Journal ArticleDOI
Influence of 60-MeV Proton-Irradiation on Standard and Strained n- and p-Channel MuGFETs
TL;DR: In this paper, the effect of proton irradiation on MOSFETs performance was investigated through basic and analog parameters considering four different splits, i.e., unstrained, uniaxial, bao-linear, uni-expansions, and u-dual.
Proceedings ArticleDOI
Impact of proton irradiation on strained triple gate SOI p- and n-MOSFETs
TL;DR: In this article, the effect of proton irradiation on basic and analog parameters of triple-gate SOI MOSFETs was investigated and a higher immunity to the back interface influence was obtained for post-irradiated pMOS devices and consequently a better analog performance was observed.
Journal ArticleDOI
Analytical Model for Drain Current of a Ballistic MOSFET
TL;DR: A simplified analytical approach within the framework of Landauer-Buttiker formalism has been employed to model the drain current in a ballistic n-channel MOSFET and the expression for the device threshold voltage has been obtained as mentioned in this paper.
References
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Journal ArticleDOI
Charge trapping in SiO2/HfO2/TiN gate stack
Journal ArticleDOI
Comment on "Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistors grown by MBE"
TL;DR: Cai et al. as mentioned in this paper made use of the shifts of the decomposed three GaN Raman phonon modes E2 to analyze and explain the irradiation effects on GaN.