Journal ArticleDOI
Lateral interband tunneling transistor in silicon-on-insulator
C. Aydin,Alexander Zaslavsky,Serge Luryi,Sorin Cristoloveanu,Denis Mariolle,D. Fraboulet,Simon Deleonibus +6 more
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TLDR
In this paper, a lateral interband tunneling transistor with a heavily doped lateral pn junction in a thin Si film on a silicon-on-insulator (SOI) substrate is presented.Abstract:
We report on a lateral interband tunneling transistor, where the source and drain form a heavily doped lateral pn junction in a thin Si film on a silicon-on-insulator (SOI) substrate. The transistor action results from the control of the reverse-bias tunneling breakdown under drain bias VD by a gate voltage VG. We observe gate control over tunneling drain current ID at both polarities of VG with negligible gate leakage. Systematic ID(VG,VD) measurements, together with numerical device simulations, show that in first approximation ID depends on the maximum junction electric field Fmax(VG,VD). Excellent performance is hence predicted in devices with more abrupt junctions and thinner SOI films. The device does not have an inversion channel and is not subject to scaling rules of standard Si transistors.read more
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Planar-type In0.53Ga0.47As channel band-to-band tunneling metal-oxide-semiconductor field-effect transistors
Ryo Iida,Sanghyeon Kim,Masafumi Yokoyama,Noriyuki Taoka,Sang-Hoon Lee,Mitsuru Takenaka,Shinichi Takagi +6 more
TL;DR: In this article, a planer-type In0.53Ga0.47As on-insulator channel band-to-band-tunneling MOSFETs with Ion/Ioff ratio of ∼105 in the VG swing of 1.5 V and sub-threshold slope (S.S.) of around 230 mV/dec at room temperature.
Journal ArticleDOI
Stepped Broken-Gap Heterobarrier Tunneling Field-Effect Transistor for Ultralow Power and High Speed
TL;DR: The concept and simulated device characteristics of ultralow-power and high-performance band-to-band tunneling field effect transistors employing stepped broken-gap heterobarriers, HetTFETs, are presented in this article.
Journal ArticleDOI
Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates
TL;DR: A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time and ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that the TFETs can operate in the n-channel mode.
Journal ArticleDOI
Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications
TL;DR: In this article, a novel N-channel Tunnel Field Effect Transistor (TFET) with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (I OFF ).
Journal ArticleDOI
P-type double gate junctionless tunnel field effect transistor
TL;DR: In this article, the 20 nm p-type double gate junctionless tunnel field effect transistor (P-DGJLTFET) was investigated and the impact of variation of different device parameters on the performance parameters of the P-DGVJLFTET was discussed.
References
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Journal ArticleDOI
Frontiers of silicon-on-insulator
TL;DR: In this article, the authors discuss methods of forming silicon-on-insulator (SOI) wafers, their physical properties, and the latest improvements in controlling the structure parameters.
Book
modern semiconductor device physics
TL;DR: Bipolar Transistors (P Asbeck) Compound-Semiconductor Field Effect Transistors(M Shur & T Fjeldly) MOSFETs and Related Devices (S Hillenius) Power Devices (B Baliga) Quantum-Effect and Hot-Electron Devices(S Luryi & A Zaslavsky) Active Microwave Diodes (H Eisele & G Haddad) High-Speed Photonic Devices (T Lee & S Chandrasekhar) Solar Cells (M Green) Appendices Index