Journal ArticleDOI
Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer
TLDR
In this article, the electrical properties of metal-oxide-semiconductor capacitors on molecular beam epitaxial GaAs in situ passivated with ultrathin amorphous Si (a-Si) layer and with ex situ deposited HfO2 gate oxide and TaN metal gate were demonstrated.Abstract:
We demonstrate the electrical properties of metal-oxide-semiconductor capacitors on molecular beam epitaxial GaAs in situ passivated with ultrathin amorphous Si (a-Si) layer and with ex situ deposited HfO2 gate oxide and TaN metal gate. Minimum thickness of the Si interface passivation layer of 1.5 nm is needed to prevent the Fermi level pinning and provide good capacitance-voltage characteristics with equivalent oxide thickness of 2.1 nm and leakage current of ⩽1.0mA∕cm2. Transmission electron microscopy analysis showed that the Si layer was oxidized up to 1.4 nm during ex situ processing while the interface between the GaAs and a-Si remained atomically sharp without any sign of interfacial reaction.read more
Citations
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Journal ArticleDOI
Towards Oxide Electronics: a Roadmap
Mariona Coll,Josep Fontcuberta,Matthias Althammer,Manuel Bibes,Hans Boschker,Albert Calleja,Guanglei Cheng,Guanglei Cheng,Mario Cuoco,Regina Dittmann,Brahim Dkhil,I. El Baggari,Marco Fanciulli,Ignasi Fina,Elvira Fortunato,Carlos Frontera,Sz. Fujita,Vincent Garcia,Sebastian T. B. Goennenwein,Claes-Göran Granqvist,Julie Grollier,Rudolf Gross,Rudolf Gross,A. Hagfeldt,Gervasi Herranz,Kazuhiro Hono,Evert Pieter Houwman,Mark Huijben,Alexei Kalaboukhov,David J. Keeble,Gertjan Koster,Lena F. Kourkoutis,Jeremy Levy,M. Lira-Cantu,Judith L. MacManus-Driscoll,Jochen Mannhart,Rodrigo Martins,Stephan Menzel,Thomas Mikolajick,Mari Napari,Minh D. Nguyen,Gunnar A. Niklasson,Charles Paillard,Shrabani Panigrahi,Guus Rijnders,Florencio Sánchez,Pablo Sanchis,Simone Sanna,Darrell G. Schlom,Uwe Schroeder,Kyle Shen,Anne Siemon,M. Spreitzer,Hiroaki Sukegawa,R. Tamayo,J. van den Brink,Nini Pryds,F. Miletto Granozio +57 more
TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
Journal ArticleDOI
Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates
Gang He,Xiaoshuang Chen,Z.Q. Sun +2 more
TL;DR: In this article, the authors provide an overview of interface engineering and chemistry of Hf-based high-k dielectrics on III-V substrates, and explore the possible influences of these hafnium-based gate dielectric on the current and future applications for nano-MOSFET devices.
Journal ArticleDOI
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
Marc Heyns,Wilman Tsai +1 more
TL;DR: In this paper, the International Technology Roadmap for Semiconductors (ITRS) indicates the requirements and technological challenges in the microelectronics industry in various technology nodes, and the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices are given in this issue of MRS Bulletin.
Journal ArticleDOI
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
TL;DR: In this article, a model based on the charge neutrality level is proposed to explain all experimental work he performed on III-V MOSFETs using ex situ atomic-layer-deposited high-k dielectrics.
Journal ArticleDOI
Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
TL;DR: In this article, an enhancement-mode n-channel InGaAs metaloxide-semiconductor field effect transistor is also demonstrated by forming true inversion channel at Al2O3∕InGaAs interface.
References
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Journal ArticleDOI
Benchmarking nanotechnology for high-performance and low-power logic transistor applications
R. Chau,Suman Datta,Mark Beaverton Doczy,B. Doyle,B. Jin,Jack Portland Kavalieros,Amlan Majumdar,Matthew V. Metz,Marko Radosavljevic +8 more
TL;DR: The results of this benchmarking exercise indicate that while these novel nanoelectronic devices show promise and opportunities for future logic applications, there still remain shortcomings in the device characteristics and electrostatics that need to be overcome.
Journal ArticleDOI
High-/spl kappa//metal-gate stack and its MOSFET characteristics
TL;DR: In this paper, the authors show that surface phonon scattering in the high/spl kappa/ dielectric is the primary cause of channel electron mobility degradation, and demonstrate that metal-gate electrodes, such as the ones with n+ and p+ work functions, are effective in improving channel mobilities to close to those of the conventional SiO/sub 2/poly-Si stack.
Journal ArticleDOI
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
Peide D. Ye,G. D. Wilk,B. Yang,J. Kwo,S. N. G. Chu,S. Nakahara,H.-J. Gossmann,Joseph Petrus Mannaerts,Minghwei Hong,K. K. Ng,J. Bude +10 more
TL;DR: In this paper, a GaAs MOSFET with thin Al2O3 gate dielectric in nanometer (nm) range grown by atomic layer deposition is demonstrated, which shows a good linearity, low gate leakage current, and negligible hysteresis in drain current in a wide range of bias voltage.
Journal ArticleDOI
Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
TL;DR: In this paper, the interface properties of Ga2O3-GaAs structures fabricated using in situ multiple-chamber molecular beam epitaxy have been investigated, where oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ≂600°C by electron-beam evaporation using a Gd3Ga5O12 single-crystal source.
Journal ArticleDOI
Effects of passivating ionic films on the photoluminescence properties of GaAs
TL;DR: In this paper, the passivating effects of spincoated films of Na2S⋅9H2O on GaAs surfaces have been studied using roomtemperature photoluminescence (PL) and low-temperature PL spectroscopy.