Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Approaching ohmic contact to two-dimensional semiconductors
TL;DR: In this paper, the authors analyze the root causes of the contact problems for two-dimensional semiconductor devices and summarize the strategies on the basis of different contact geometries, aiming to lift out the Fermi level pinning effect and achieve the ohmic contact.
Journal ArticleDOI
Proximity coupling in superconductor-graphene heterostructures.
TL;DR: In this paper, the electronic properties and the prospective research directions of superconductor-graphene heterostructures are discussed, together with their advantages and limitations, followed by a discussion on the advances in device fabrication and the relevant length scales.
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Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
Junjie Wang,Daniel Rhodes,Simin Feng,Minh An T. Nguyen,Kenji Watanabe,T. Taniguchi,Thomas E. Mallouk,Mauricio Terrones,Luis Balicas,Jian-Xin Zhu +9 more
TL;DR: In this paper, the gate-dependent conductance of few-layer transition metal dichalcogenides (TMDCs) was examined and the authors showed that the TFE process arises due to a large number of subgap impurity states, which also leads to high mobility edge carrier densities.
Journal ArticleDOI
Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices
Guorui Chen,Mengqiao Sui,Duoming Wang,Shuopei Wang,Jeil Jung,Pilkyung Moon,Shaffique Adam,Kenji Watanabe,Takashi Taniguchi,Shuyun Zhou,Mikito Koshino,Guangyu Zhang,Yuanbo Zhang +12 more
TL;DR: It is found that the formation of a moiré superlattice in graphene on hBN yields new, unexpected consequences: a set of tertiary Dirac points (TDPs) emerge, which give rise to additional sets of Landau levels when the sample is subjected to an external magnetic field.
Journal ArticleDOI
The Electronic Thickness of Graphene
Peter Rickhaus,Ming-Hao Liu,Marcin Kurpas,Annika Kurzmann,Yongjin Lee,Hiske Overweg,Marius Eich,Riccardo Pisoni,Takashi Tamaguchi,Kenji Wantanabe,Klaus Richter,Klaus Ensslin,Thomas Ihn +12 more
TL;DR: In this article, the authors investigated the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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