Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal ArticleDOI
Single-Electron Double Quantum Dots in Bilayer Graphene.
Luca Banszerus,Luca Banszerus,Samuel Möller,Samuel Möller,Eike Icking,Eike Icking,Kenji Watanabe,Takashi Taniguchi,Christian Volk,Christoph Stampfer,Christoph Stampfer +10 more
TL;DR: Finite bias magneto-spectroscopy measurements allow to resolve the excited state spectra of the first electrons in the double quantum dot; being in agreement with spin and valley conserving interdot tunneling processes.
Journal ArticleDOI
Epitaxial single-crystal hexagonal boron nitride multilayers on Ni (111)
Kyung Yeol Ma,Leining Zhang,Sung Gook Jin,Yan Wang,Seong In Yoon,Hyun Sick Hwang,Juseung Oh,Darryl Jeong,Meihui Wang,Shahana Chatterjee,Gwan Su Kim,A-Rang Jang,Jieun Yang,Sunmin Ryu,Hu Young Jeong,Rodney S. Ruoff,Manish Chhowalla,Feng Ding,Hyeon Suk Shin +18 more
Journal ArticleDOI
UV-SWIR broad range photodetectors made from few-layer α-In2Se3 nanosheets.
TL;DR: In this article, a broad range photodetectors made from few-layer α-In2Se3 nanosheets are reported, which show response in an unexpected broad range from ultraviolet (325 nm) to short-wavelength infrared (1800 nm) at room temperature.
Journal ArticleDOI
Control of electron-electron interaction in graphene by proximity screenings.
Minsoo Kim,Shuigang Xu,A. I. Berdyugin,Alessandro Principi,Sergey Slizovskiy,Na Xin,Piranavan Kumaravadivel,Wenjun Kuang,Matthew J. Hamer,R. Krishna Kumar,Roman V. Gorbachev,Kei Watanabe,T. Taniguchi,Irina V. Grigorieva,Vladimir I. Fal'ko,Marco Polini,Marco Polini,Marco Polini,Andre K. Geim +18 more
TL;DR: Control the interactions by proximity screening with gate dielectrics of nanometer thickness, revealing qualitative changes in concentration and temperature dependences, and validating their analysis using electron hydrodynamics and umklapp scattering approaches.
Journal ArticleDOI
Strong interaction between interlayer excitons and correlated electrons in WSe2/WS2 moiré superlattice.
Shengnan Miao,Tianmeng Wang,Xiong Huang,Dongxue Chen,Dongxue Chen,Zhen Lian,Chong Wang,Mark Blei,Takashi Taniguchi,Kenji Watanabe,Sefaattin Tongay,Zenghui Wang,Di Xiao,Yong-Tao Cui,Su-Fei Shi +14 more
TL;DR: In this paper, the photoluminescence from interlayer excitons in a WS2/WSe2 heterobilayer was studied to reveal the onset of various correlated insulating states.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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