Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Unconventional superconductivity in magic-angle graphene superlattices
Yuan Cao,Valla Fatemi,Shiang Fang,Kenji Watanabe,Takashi Taniguchi,Efthimios Kaxiras,Pablo Jarillo-Herrero +6 more
TL;DR: The realization of intrinsic unconventional superconductivity is reported—which cannot be explained by weak electron–phonon interactions—in a two-dimensional superlattice created by stacking two sheets of graphene that are twisted relative to each other by a small angle.
Journal ArticleDOI
2D materials and van der Waals heterostructures
TL;DR: Two-dimensional heterostructures with extended range of functionalities yields a range of possible applications, and spectrum reconstruction in graphene interacting with hBN allowed several groups to study the Hofstadter butterfly effect and topological currents in such a system.
Journal ArticleDOI
Recent Advances in Ultrathin Two-Dimensional Nanomaterials
Chaoliang Tan,Xiehong Cao,Xiehong Cao,Xue-Jun Wu,Qiyuan He,Jian Yang,Xiao Zhang,Junze Chen,Wei Zhao,Shikui Han,Gwang-Hyeon Nam,Melinda Sindoro,Hua Zhang +12 more
TL;DR: The unique advances on ultrathin 2D nanomaterials are introduced, followed by the description of their composition and crystal structures, and the assortments of their synthetic methods are summarized.
Journal ArticleDOI
Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
Yuan Cao,Valla Fatemi,Ahmet Demir,Shiang Fang,Spencer Tomarken,Jason Luo,Javier Sanchez-Yamagishi,Kenji Watanabe,Takashi Taniguchi,Efthimios Kaxiras,Raymond Ashoori,Pablo Jarillo-Herrero +11 more
TL;DR: It is shown experimentally that when this angle is close to the ‘magic’ angle the electronic band structure near zero Fermi energy becomes flat, owing to strong interlayer coupling, and these flat bands exhibit insulating states at half-filling, which are not expected in the absence of correlations between electrons.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
References
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Journal ArticleDOI
A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
TL;DR: In this paper, the authors present electronic transport measurements of single and bilayer graphene on commercially available hexagonal boron nitride and extract mobilities as high as 125 000 cm^2/V/s at room temperature and 275 000 cm 2/V /s at 4.2 K. The excellent quality is supported by the early development of the nu = 1 quantum Hall plateau at a magnetic field of 5 T and temperature of 4 2 K.
Journal ArticleDOI
Interaction phenomena in graphene seen through quantum capacitance
Geliang Yu,Rashid Jalil,Branson D. Belle,A. S. Mayorov,Peter Blake,Fred Schedin,Sergey V. Morozov,Leonid Ponomarenko,F. Chiappini,Steffen Wiedmann,Uli Zeitler,Mikhail I. Katsnelson,Andre K. Geim,Kostya S. Novoselov,D. C. Elias +14 more
TL;DR: Large-area high-quality graphene capacitors are used to study behavior of the density of states in this material in zero and high magnetic fields, revealing a number of interesting many-body effects.
Journal ArticleDOI
Contact resistance in graphene-based devices
Saverio Russo,Saverio Russo,Monica F. Craciun,Michihisa Yamamoto,Alberto F. Morpurgo,Seigo Tarucha +5 more
TL;DR: In this article, the total contact resistance present at the interface between a metal and graphene layers of different, known thickness was investigated and quantitatively the gate independent part of the contact resistance is the same for single-, bi-, and tri-layer graphene.
Journal ArticleDOI
Reducing Contact Resistance in Graphene Devices through Contact Area Patterning
TL;DR: This work finds that a 32% reduction in contact resistance results in Cu-contacted, two-terminal devices, while a 22% reduction is achieved for top-gated graphene transistors with Pd contacts as compared to conventionally fabricated devices.
Journal ArticleDOI
Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics
TL;DR: In this article, the authors predict the currentvoltage (I−V) characteristics and contact resistance of end-contacted metal electrodes−graphene and metal electrode−carbon nanotube (CNT) interfaces for five metals, Ti, Pd, Pt, Cu, and Au, based on the first-principles quantum mechanical (QM) density functional and matrix Green's function methods.