Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal Article
Topological Valley Transport at Bilayer Graphene Domain Walls
Long Ju,Zhiwen Shi,Nityan Nair,Yinchuan Lv,Chenhao Jin,Jairo Velasco,Claudia Ojeda-Aristizabal,Hans A. Bechtel,Michael C. Martin,Alex Zettl,James Analytis,Paul L. McEuen,Feng Wang +12 more
TL;DR: Experimental observation of ballistic (that is, with no scattering of electrons) conducting channels at bilayer graphene domain walls, which opens up opportunities for exploring unique topological phases and valley physics in graphene.
Journal ArticleDOI
Tuning quantum nonlocal effects in graphene plasmonics
Mark B. Lundeberg,Yuanda Gao,Reza Asgari,Cheng Tan,Ben Van Duppen,Marta Autore,Pablo Alonso-González,Achim Woessner,Kenji Watanabe,Takashi Taniguchi,Rainer Hillenbrand,James Hone,Marco Polini,Frank H. L. Koppens,Frank H. L. Koppens +14 more
TL;DR: Graphene plasmons are used, propagating at extremely slow velocities close to the electron Fermi velocity, to probe the nonlocal response of the graphene electron liquid, and a parameter-free match with the full quantum description of the massless Dirac electron gas is revealed.
Journal ArticleDOI
Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures
TL;DR: Two-dimensional hexagonal boron nitride (h-BN) has similar lattice structure to graphene and has a lattice mismatch with graphene of less than 1.7%. At the same time, h-BN has an atomic level of flat surface, B atoms and N atoms saturated into the bond, which was considered the highest among the insulating substrates as discussed by the authors.
Journal ArticleDOI
Ballistic Transport Exceeding 28 μm in CVD Grown Graphene
Luca Banszerus,Michael Schmitz,Stephan Engels,Stephan Engels,M. Goldsche,M. Goldsche,Kenji Watanabe,Takashi Taniguchi,Bernd Beschoten,Christoph Stampfer,Christoph Stampfer +10 more
TL;DR: Temperature-dependent measurements prove that ballistic transport is maintained exceeding 1 μm up to 200 K and the ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices.
Journal ArticleDOI
Superballistic flow of viscous electron fluid through graphene constrictions
R. Krishna Kumar,R. Krishna Kumar,Denis A. Bandurin,Francesco M. D. Pellegrino,Yang Cao,Alessandro Principi,Haoyu Guo,Gregory Auton,M. Ben Shalom,L. A. Ponomarenko,Gregory Falkovich,Kenji Watanabe,T. Taniguchi,Irina V. Grigorieva,Leonid Levitov,Marco Polini,Marco Polini,Andre K. Geim +17 more
TL;DR: In this paper, the authors studied electron transport through graphene constrictions and showed that their conductance below 150 K increases with increasing temperature, in stark contrast to the metallic character of doped graphene.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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