Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal ArticleDOI
Current-Phase Relation of Ballistic Graphene Josephson Junctions
Gaurav Nanda,Juan L Aguilera-Servin,Juan L Aguilera-Servin,Péter Rakyta,Andor Kormányos,Reinhold Kleiner,Dieter Koelle,Kazuo Watanabe,Takashi Taniguchi,Lieven M. K. Vandersypen,Srijit Goswami +10 more
TL;DR: A fully gate-tunable graphene superconducting quantum intereference device (SQUID) is used to determine the CPR of ballistic graphene JJs and the CPR is found to be skewed, deviating significantly from a sinusoidal form.
Journal ArticleDOI
HBN-Encapsulated, Graphene-based, Room-temperature Terahertz Receivers, with High Speed and Low Noise
TL;DR: These devices are demonstrated, combining the low (∼2000 kB μm-2) electronic specific heat of high mobility with hexagonal boron nitride-encapsulated graphene, with asymmetric field enhancement produced by a bow-tie antenna, resonating at 3 THz, making them the fastest, broad-band, low-noise, room-temperature terahertz PD, to date.
Journal ArticleDOI
Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
Marius Eich,František Herman,Riccardo Pisoni,Hiske Overweg,Yongjin Lee,Peter Rickhaus,Kenji Watanabe,Takashi Taniguchi,Manfred Sigrist,Thomas Ihn,Klaus Ensslin +10 more
TL;DR: In this article, a bilayer graphene quantum dot is laterally confined by gapped regions and connected to the leads via p-n junctions, and electron and hole occupancy is realized by electrostatic confinement.
Journal ArticleDOI
Large-scale BN tunnel barriers for graphene spintronics
Wangyang Fu,Romain Maurand +1 more
TL;DR: In this article, the authors have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD), and the spin-transporting graphene and the tunnel barrier material are CVD-grown.
Journal ArticleDOI
Toward Ferroelectric Control of Monolayer MoS2
Ariana E. Nguyen,Pankaj Sharma,Thomas Scott,Edwin Preciado,Velveth Klee,Dezheng Sun,I-Hsi Daniel Lu,David Barroso,Suk Hyun Kim,Vladimir Ya. Shur,A. R. Akhmatkhanov,Alexei Gruverman,Ludwig Bartels,Peter A. Dowben +13 more
TL;DR: S2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferro electric polarization pattern without the need for further lithography.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI