Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip.
Frédéric Peyskens,Frédéric Peyskens,Chitraleema Chakraborty,Muhammad Muneeb,Dries Van Thourhout,Dirk Englund +5 more
TL;DR: In this paper, the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip is described. And the authors demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity.
Journal ArticleDOI
Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Soham Manni,Soham Manni,Paul C. Canfield,Paul C. Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero +13 more
TL;DR: In this paper, the authors report tunneling through the layered magnetic insulator CrI3 as a function of temperature and applied magnetic field and electrically detect the magnetic ground state and interlayer coupling and observe a field-induced metamagnetic transition.
Journal ArticleDOI
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge
Sojung Kang,Donghun Lee,Jong Hun Kim,Andrea Capasso,Hee Seong Kang,Jinwoo Park,Chul Ho Lee,Gwan Hyoung Lee +7 more
TL;DR: In this article, the unique properties of 2D semiconducting materials and their applications in terms of electronic and optoelectronic devices are reviewed, including material quality, dielectric, and contacts.
Journal ArticleDOI
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad,Kayoung Lee,Sangwoo Kang,Jiamin Xue,Stefano Larentis,Chris M. Corbet,Kyounghwan Kim,Hema C. P. Movva,Takashi Taniguchi,Kenji Watanabe,Leonard F. Register,Sanjay K. Banerjee,Emanuel Tutuc +12 more
TL;DR: In this article, gate-tunable resonant tunneling and negative differential resistance in the interlayer currentvoltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric.
Journal ArticleDOI
Vertical 2D Heterostructures
TL;DR: A review of recent developments in the rapidly emerging field of 2D nanoarchitectonics from a materials chemistry perspective, with a focus on the types of heterostructures available, their assembly strategies, and their emerging properties is presented in this article.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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