Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Stable and scalable metallic phase on MoS2 using forming-gas microwave plasma
TL;DR: A controllable and scalable 2H to 1T phase engineering technique for MoS2 using microwave plasma and allows lithographically defining 1T regions on a 2H sample, which shows excellent temporal and thermal stability making it suitable for standard device fabrication techniques.
Journal ArticleDOI
Signatures of van Hove Singularities Probed by the Supercurrent in a Graphene-hBN Superlattice.
David I. Indolese,Raphaelle Delagrange,Péter Makk,Péter Makk,J. R. Wallbank,K. Wanatabe,T. Taniguchi,Christian Schönenberger +7 more
TL;DR: In this article, supercurrent measurements in a Josephson junction made from such a graphene superlattice in the long and diffusive transport regime are presented, where the critical current depends on the Thouless energy.
Journal ArticleDOI
Encapsulated graphene-based Hall sensors on foil with increased sensitivity
Zhenxing Wang,Luca Banszerus,Martin Otto,Kenji Watanabe,Takashi Taniguchi,Christoph Stampfer,Christoph Stampfer,Daniel Neumaier +7 more
TL;DR: In this paper, a simple encapsulation of graphene with polymethyl methacrylate (PMMA) as a proof of concept and an encapsulation with mechanically exfoliated hexagonal boron nitride (hBN) were investigated.
Journal ArticleDOI
Experimental and Computational Investigation of Layer-Dependent Thermal Conductivities and Interfacial Thermal Conductance of One- to Three-Layer WSe2.
Elham Easy,Yuan Gao,Yingtao Wang,Dingkai Yan,Seyed M. Goushehgir,Eui-Hyeok Yang,Baoxing Xu,Xian Zhang +7 more
TL;DR: In this paper, the authors used a refined opto-thermal Raman technique to explore the thermal transport properties of one popular transition metal dichalcogenides (TMDC) material WSe2, in the single-layer (1L), bilayer (2L), and trilayer (3L) forms.
Journal ArticleDOI
Controllable one-step growth of bilayer MoS2-WS2/WS2 heterostructures by chemical vapor deposition.
Xiumei Zhang,Shaoqing Xiao,Haiyan Nan,Haoxin Mo,Xi Wan,Xiaofeng Gu,Kostya Ostrikov,Kostya Ostrikov +7 more
TL;DR: A three-stage chemical vapor deposition method for the synthesis of complex heterostructures based on different TMDs materials, which would greatly expand the heterostructure family and broaden their applications is demonstrated.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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