Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal ArticleDOI
Graphene transistor based on tunable Dirac fermion optics
Ke Wang,Mirza M. Elahi,Lei Wang,K. M. Masum Habib,Takashi Taniguchi,Kenji Watanabe,James Hone,Avik W. Ghosh,Gil-Ho Lee,Gil-Ho Lee,Philip Kim +10 more
TL;DR: In this article, a quantum switch based on analogous Dirac fermion optics (DFO) is presented, in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac Fermions.
Journal ArticleDOI
Multiple hot-carrier collection in photo-excited graphene Moiré superlattices
Sanfeng Wu,Lei Wang,You Lai,Wen-Yu Shan,Grant Aivazian,Xian Zhang,Takashi Taniguchi,Kenji Watanabe,Di Xiao,Cory R. Dean,James Hone,Zhiqiang Li,Xiaodong Xu +12 more
TL;DR: In this paper, the photo-Nernst effect was used to demonstrate a collection of at least five hot-carriers per absorbed photon in a van der Waals superlattice.
Journal ArticleDOI
2D Crystal-Based Fibers: Status and Challenges.
TL;DR: This Review provides directions and guidelines for developing new 2D crystal-based fibers and exploring their potentials in the fields of smart wearable devices.
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Ambipolar 2D Semiconductors and Emerging Device Applications
TL;DR: This review is expected to shed light on the future development of ambipolar 2D semiconductors, exploring more new devices with novel functions and promoting the applications of 2D materials.
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Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects
TL;DR: In this article , the impact of Fermi level pinning (FLP) on 2D semiconductor devices has been investigated by exploring various origins responsible for the FLP, effects of FLP on two-dimensional device performances, and methods for improving metallic contact to 2D materials.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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