Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Probing the Spin-Polarized Electronic Band Structure in Monolayer Transition Metal Dichalcogenides by Optical Spectroscopy
TL;DR: Values of the spin splitting suggest that both n- and p-type WSe2 and MoSe2 can be relevant for spin- and valley-based applications.
Journal ArticleDOI
The properties of ultrapure delafossite metals
TL;DR: The physical properties of the delafossite metals PdCoO2, PtCoO 2 and PdCrO2 have only recently been studied in detail as discussed by the authors.
Journal ArticleDOI
Mapping the twist angle and unconventional Landau levels in magic angle graphene
Aviram Uri,Sameer Grover,Yuan Cao,J. A. Crosse,K. Bagani,Daniel Rodan-Legrain,Yuri Myasoedov,Kenji Watanabe,Takashi Taniguchi,Pilkyung Moon,Mikito Koshino,Pablo Jarillo-Herrero,Eli Zeldov +12 more
TL;DR: In this article, the authors used a scanning nanoSQUID-on-tip to obtain tomographic imaging of the Landau levels in the quantum Hall state in twisted bilayer graphene (MATBG) transport devices, which provides a highly sensitive probe of the charge disorder and of the local band structure determined by the local twist angle.
Journal ArticleDOI
Chemistry at the Edge of Graphene.
TL;DR: The present Review investigates the processes and mechanisms that drive the chemical functionalization of graphene at the edges from theoretical and experimental perspectives, with a particular focus on the characterization tools available to investigate the chemistry at the edge.
Journal ArticleDOI
Symmetry breaking in twisted double bilayer graphene
Minhao He,Yuhao Li,Jiaqi Cai,Yang Liu,Kenji Watanabe,T. Taniguchi,Xiaodong Xu,Matthew Yankowitz +7 more
TL;DR: In this paper, electrical transport measurements of twisted double bilayer graphene with which they examine the fundamental role of spontaneous symmetry breaking in its phase diagram were performed, and the results suggest that similar mechanisms are probably relevant across a broader class of semiconducting flat band van der Waals heterostructures.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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