Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal Article
Tunable Excitons in Bilayer Graphene
Long Ju,Lei Wang,Ting Cao,Takashi Taniguchi,Kenji Watanabe,Steven G. Louie,Farhan Rana,Jiwoong Park,James Hone,Feng Wang,Paul L. McEuen +10 more
TL;DR: The observation of excitons in bilayer graphene is reported using photocurrent spectroscopy of high-quality BLG encapsulated in hexagonal boron nitride and two prominent excitonic resonances with narrow line widths that are tunable from the mid-infrared to the terahertz range.
Journal ArticleDOI
Scalable tight-binding model for graphene
Ming-Hao Liu,Peter Rickhaus,Péter Makk,Endre Tóvári,Romain Maurand,Fedor Tkatschenko,Markus Weiss,Christian Schönenberger,Klaus Richter +8 more
TL;DR: The findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices.
Journal ArticleDOI
Lithographic band structure engineering of graphene.
Bjarke Sørensen Jessen,Lauge Gammelgaard,Morten Rishøj Thomsen,David M. A. Mackenzie,David M. A. Mackenzie,Joachim Dahl Thomsen,José M. Caridad,Emil Duegaard,Kenji Watanabe,Takashi Taniguchi,Timothy J. Booth,Thomas Garm Pedersen,Antti-Pekka Jauho,Peter Bøggild +13 more
TL;DR: Dense nanostructuring of hBN-encapsulated graphene enables band structure engineering with distinct magnetotransport signatures and a tunable bandgap, and there are strong indications that the lithographically engineered band structure at the main Dirac point is cloned to a satellite peak that appears due to moiré interactions between the graphene and the encapsulating material.
Journal ArticleDOI
Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe 2
Felix Lüpke,Felix Lüpke,Dacen Waters,Sergio C. de la Barrera,Michael Widom,David Mandrus,David Mandrus,Jiaqiang Yan,Randall M. Feenstra,Benjamin Hunt +9 more
TL;DR: In this paper, the coexistence of superconductivity and the quantum spin Hall edge state in a van der Waals heterostructure was investigated by placing a monolayer of 1T′-WTe2, a quantum spin-hall insulator1−3, on a NbSe2 superconductor, using scanning tunnelling microscopy and spectroscopy.
Journal ArticleDOI
2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges.
TL;DR: In this article , a comprehensive review of representative 2D materials, general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures are discussed.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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