Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Journal ArticleDOI
Ultrafast nonlinear optical response of Dirac fermions in graphene.
Matthias Baudisch,Andrea Marini,Andrea Marini,Joel D. Cox,Tony Zhu,Francisco Silva,Stephan M. Teichmann,Mathieu Massicotte,Frank H. L. Koppens,Leonid Levitov,F. Javier García de Abajo,Jens Biegert +11 more
TL;DR: In this article, the instantaneous response of graphene to ultrafast optical fields is investigated, elucidating the role of hot carriers on sub-100-fs timescales, and an intuitive picture is given for the carrier trajectories in response to the optical-field polarization state, which may also apply to surface states in topological insulators with similar Dirac cone dispersion relations.
Journal ArticleDOI
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
Theresia Knobloch,Yury Yu. Illarionov,Yury Yu. Illarionov,Fabian Ducry,Christian Schleich,Stefan Wachter,Kenji Watanabe,Takashi Taniguchi,Thomas Mueller,Michael Waltl,Mario Lanza,Mikhail I. Vexler,Mathieu Luisier,Tibor Grasser +13 more
TL;DR: In this article, the performance limits of hexagonal boron nitride when used as a gate insulator in complementary metal-oxide-semiconductor (CMOS) devices based on two-dimensional materials, concluding that the material is not suitable for use in ultrascaled CMOS devices.
Journal ArticleDOI
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad,Kayoung Lee,Sangwoo Kang,Jiamin Xue,Stefano Larentis,Chris M. Corbet,Kyounghwan Kim,Hema C. P. Movva,Takashi Taniguchi,Kenji Watanabe,Leonard F. Register,Sanjay K. Banerjee,Emanuel Tutuc +12 more
TL;DR: Gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron nitride (hBN) dielectric are demonstrated.
Journal ArticleDOI
Black phosphorus nanoelectromechanical resonators vibrating at very high frequencies.
Zenghui Wang,Hao Jia,Xu-Qian Zheng,Rui Yang,Zefang Wang,Guo Jun Ye,Xianhui Chen,Jie Shan,Philip X.-L. Feng +8 more
TL;DR: In this paper, a new type of nanoelectromechanical resonator based on black phosphorus crystals is demonstrated, which is capable of vibrating at high and very high frequencies (HF and VHF bands, up to ∼100 MHz).
Journal ArticleDOI
Transport Through a Network of Topological Channels in Twisted Bilayer Graphene
Peter Rickhaus,John Wallbank,Sergey Slizovskiy,Riccardo Pisoni,Hiske Overweg,Yongjin Lee,Marius Eich,Ming-Hao Liu,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin +11 more
TL;DR: This work demonstrates coherent electronic transport in a lattice of topologically protected states in the moiré crystal of minimally twisted bilayer graphene and observes Fabry-Pérot and Aharanov-Bohm oscillations that are robust in magnetic fields, indicating that charge carriers in the bulk flow in topologicallyprotected, one-dimensional channels.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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