Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
Reads0
Chats0
TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
Citations
More filters
Journal ArticleDOI
Graphene on Hexagonal Boron Nitride
TL;DR: This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.
Journal ArticleDOI
Development of high frequency and wide bandwidth Johnson noise thermometry
TL;DR: In this article, a high frequency, wide bandwidth radiometer operating at room temperature was developed, which augments the traditional technique of Johnson noise thermometry for nanoscale thermal transport studies.
Journal ArticleDOI
Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
Jinsong Xu,Simranjeet Singh,Jyoti Katoch,Guanzhong Wu,Tiancong Zhu,Igor Zutic,Roland Kawakami +6 more
TL;DR: In this paper, gate-tunable spin transport in encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts was demonstrated. And the resulting gate-controlled spin inversion in graphene holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects to Majorana fermions and skyrmions.
Journal ArticleDOI
Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors.
Trevor A. Petach,Trevor A. Petach,K. V. Reich,K. V. Reich,Xiao Zhang,Kenji Watanabe,Takashi Taniguchi,Boris I Shklovskii,David Goldhaber-Gordon,David Goldhaber-Gordon +9 more
TL;DR: This work develops a model for Coulomb scattering in ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionicLiquid often dominates the scattering.
Journal ArticleDOI
Graphene-based light sensing: fabrication, characterisation, physical properties and performance
TL;DR: The performance and advances in functionalised graphene and hybrid photodetectors are reviewed, with particular focus on the physical mechanisms governing the photoresponse, the performance and possible future paths of investigation.
References
More filters
Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI