Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Probing the intrinsic optical quality of CVD grown MoS 2
TL;DR: In this paper, a systematic photoluminescence (PL) spectroscopic approach to assess the intrinsic optical and crystalline quality of CVD grown metal dichalcogenides (TMDs) is presented.
Journal ArticleDOI
Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate
Kei Kinoshita,Rai Moriya,Momoko Onodera,Yusai Wakafuji,Satoru Masubuchi,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida +7 more
TL;DR: In this paper, the authors demonstrate the dry release transfer of single-layer and bi-layer graphene and few-layer h-BN by utilizing poly(propylene) carbonate (PPC) films.
Journal ArticleDOI
Nanosecond spin relaxation times in single layer graphene spin valves with hexagonal boron nitride tunnel barriers
Simranjeet Singh,Jyoti Katoch,Jinsong Xu,Cheng Tan,Tiancong Zhu,Walid Amamou,James Hone,Roland Kawakami,Roland Kawakami +8 more
TL;DR: In this article, the authors present an experimental study of spin transport in single layer graphene using atomic sheets of hexagonal boron nitride (h-BN) as a tunnel barrier for spin injection.
Journal ArticleDOI
Ultra-low energy programmable non-volatile silicon photonics based on phase-change materials with graphene heaters
Zhuoran Fang,Rui Chen,Jiajiu Zheng,Asir Intisar Khan,Kathryn Neilson,Sarah Geiger,Dennis M. Callahan,M. Moebius,Abhishek Saxena,Michelle Chen,Carlos Ríos,Juejun Hu,Eric Pop,Arka Majumdar +13 more
Journal ArticleDOI
Electronic spin transport in dual-gated bilayer graphene
Ahmet Avsar,Ivan J. Vera-Marun,Jun You Tan,Gavin Kok Wai Koon,Kenji Watanabe,Takashi Taniguchi,Shaffique Adam,Shaffique Adam,Barbaros Özyilmaz +8 more
TL;DR: Ozyilmaz et al. as discussed by the authors investigated the role of substrate and polymer residues on spin relaxation in bilayer graphene spin valve devices and showed that the role is not limited to substrate impurities, but rather to polymer residues.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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