Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene.
Georgi Diankov,Chi-Te Liang,Chi-Te Liang,Francois Amet,Patrick Gallagher,Menyoung Lee,Andrew Bestwick,Kevin Tharratt,William Coniglio,Jan Jaroszynski,Kenji Watanabe,Takashi Taniguchi,David Goldhaber-Gordon +12 more
TL;DR: In this paper, magneto-resistance measurements of fractional quantum Hall states in the N 2 Landau level (filling factors 4 <|ν|<8) in bilayer graphene were reported.
Journal ArticleDOI
A versatile DNA detection scheme based on the quenching of fluorescent silver nanoclusters by MoS 2 nanosheets: Application to aptamer-based determination of hepatitis B virus and of dopamine
TL;DR: In this paper, the fluorescence of polymer-capped silver nanoclusters (AgNCs) is quenched by MoS2 nanosheets, and the results showed that the resulting assays have low detection limits and linear ranges that extend from 5 to 30 nM for hepatitis B DNA and from 0.3 to 1μM for dopamine.
Journal ArticleDOI
Piezotronic effect in 1D van der Waals solid of elemental tellurium nanobelt for smart adaptive electronics
TL;DR: In this article, the authors investigate the strain-gated charge carriers transport properties in 1D van der Waals solid of p-type tellurium nanobelt and show that strain-induced polarization charges at the surfaces of Te nanobels can modulate the electronic transport through the interfacial effect on the Schottky contacts and the volumetric effect on conducting channel.
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The Art of Constructing Black Phosphorus Nanosheet Based Heterostructures: From 2D to 3D
TL;DR: In this study, recent progress in the construction of BPNS-based heterostructures ranging from 2D hybrid structures to 3D networks is discussed, emphasizing the different types of interactions ( covalent or noncovalent) between individual layers.
Journal ArticleDOI
Valley Subband Splitting in Bilayer Graphene Quantum Point Contacts.
Rainer Kraft,I. V. Krainov,Vanessa Gall,A. P. Dmitriev,Ralph Krupke,Igor V. Gornyi,Romain Danneau +6 more
TL;DR: In this paper, a study of one-dimensional subband splitting in a bilayer graphene point contact in which quantized conductance in steps of $4{e}^{2}/h$ is clearly defined down to the lowest subband was reported.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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