Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Evidence of a gate-tunable Mott insulator in a trilayer graphene moiré superlattice
Guorui Chen,Guorui Chen,Lili Jiang,Shuang Wu,Bosai Lyu,Hongyuan Li,Bheema Lingam Chittari,Kenji Watanabe,Takashi Taniguchi,Zhiwen Shi,Jeil Jung,Yuanbo Zhang,Feng Wang,Feng Wang +13 more
TL;DR: In this paper, a tunable Mott insulator in a trilayer graphene heterostructure with a moire superlattice was proposed, where the competition between the Coulomb interaction and the kinetic energy can be varied in situ.
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Fast growth of inch-sized single-crystalline graphene from a controlled single nucleus on Cu–Ni alloys
Tianru Wu,Xuefu Zhang,Qinghong Yuan,Jiachen Xue,Guangyuan Lu,Zhihong Liu,Wang Huishan,Haomin Wang,Feng Ding,Qingkai Yu,Xiaoming Xie,Xiaoming Xie,Mianheng Jiang,Mianheng Jiang +13 more
TL;DR: An efficient strategy for achieving large-area single-crystalline graphene by letting a single nucleus evolve into a monolayer at a fast rate is demonstrated by locally feeding carbon precursors to a desired position of a substrate composed of an optimized Cu-Ni alloy.
Journal ArticleDOI
Superconductivity and strong correlations in moiré flat bands
TL;DR: In this article, the status and prospects for flat-band engineering in van der Waals heterostructures and explore how both phenomena emerge from the moire flat bands are reviewed and discussed.
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Tunable correlated states and spin-polarized phases in twisted bilayer-bilayer graphene.
Yuan Cao,Daniel Rodan-Legrain,Oriol Rubies-Bigorda,Jeong Min Park,Kenji Watanabe,Takashi Taniguchi,Pablo Jarillo-Herrero +6 more
TL;DR: Small-angle twisted bilayer–bilayer graphene is tunable by the twist angle and electric and magnetic fields, and can be used to gain further insights into correlated states in two-dimensional superlattices.
Journal ArticleDOI
Contact engineering for 2D materials and devices
TL;DR: The phenomenon of Fermi level pinning at the metal/2D contact interface, the Schottky versus Ohmic nature of the contacts and various contact engineering approaches including interlayer contacts, phase engineered contacts, and basal versus edge plane contacts are elucidated.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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