Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
Citations
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Isospin magnetism and spin-polarized superconductivity in Bernal bilayer graphene
TL;DR: In this article , the authors observed spin-polarized superconductivity in Bernal bilayer graphene when doped to a saddle-point van Hove singularity generated by large applied perpendicular electric field.
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Microscopic origin of low frequency noise in MoS2 field-effect transistors
TL;DR: In this paper, low frequency 1/f noise was measured in molybdenum di-sulphide (MoS2) field effect transistors in multiple device configurations including MoS2 on silicon dioxide as well as MoS 2-hexagonal boron nitride (hBN) heterostructures.
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Properties of graphene-metal contacts probed by Raman spectroscopy
TL;DR: In this article, the authors combined both electrical characterization and Raman spectroscopy to study the contact resistance issue in graphene field effect transistor (FET) and found that the graphene-metal contact resistance is a significant contributor to the total resistance.
Journal ArticleDOI
Thermal radiation control from hot graphene electrons coupled to a photonic crystal nanocavity
Ren-Jye Shiue,Yuanda Gao,Cheng Tan,Cheng Peng,Jiabao Zheng,Jiabao Zheng,Dmitri K. Efetov,Young Duck Kim,Young Duck Kim,James Hone,Dirk Englund +10 more
TL;DR: Stable high-temperature thermal emission based on hot electrons in graphene coupled to a photonic crystal nanocavity is reported, which strongly modifies the EM LDOS in nanoscale-patterned metals and semiconductors.
Journal ArticleDOI
Ohmic Contact Engineering for Two-Dimensional Materials
TL;DR: In this paper, the authors summarize recent progress and developments in contact engineering of 2D materials for the realization of ohmic contacts in 2D electronic devices and discuss opportunities and challenges for optimizing contacts for future 2D electronics.
References
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Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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