Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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Electronically Tunable Perfect Absorption in Graphene
Seyoon Kim,Min Seok Jang,Min Seok Jang,Victor W. Brar,Victor W. Brar,Kelly W. Mauser,Laura Kim,Harry A. Atwater +7 more
TL;DR: In this article, the authors demonstrate electronically tunable perfect absorption in graphene, covering less than 10% of the surface area, by incorporating multiscale nanophotonic structures composed of a low-permittivity substrate and subwavelength noble metal plasmonic antennas.
Journal ArticleDOI
Structural Engineering of Low-Dimensional Metal-Organic Frameworks: Synthesis, Properties, and Applications
TL;DR: The potential applications of LD MOF‐based materials in catalysis, energy storage, gas adsorption and separation, and sensing are introduced, and challenges and opportunities of this fascinating research field are proposed.
Journal ArticleDOI
Stacking-engineered ferroelectricity in bilayer boron nitride
TL;DR: A rational design approach to engineering 2D ferroelectrics from a nonferroelectric parent compound by using van der Waals assembly is demonstrated and the ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications.
Journal ArticleDOI
Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors
TL;DR: In this paper, the most widely studied 2D transition metal dichalcogenides (TMD) are focused on, and an overview of recent progress on doping, contact, and interface engineering of the TMD-based field effect transistors is provided.
Journal ArticleDOI
Observation of negative refraction of Dirac fermions in graphene
TL;DR: In this paper, the negative refractive behavior of Dirac fermions in graphene has been demonstrated without requiring to engineer sub-wavelength structures, exploiting its unique relativistic band structure, which is of particular relevance to the on-going efforts to develop novel quantum devices with emerging layered materials.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
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