Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
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TLDR
In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.Abstract:
Heterostructures based on layering of two-dimensional (2D) materials such as graphene and hexagonal boron nitride represent a new class of electronic devices. Realizing this potential, however, depends critically on the ability to make high-quality electrical contact. Here, we report a contact geometry in which we metalize only the 1D edge of a 2D graphene layer. In addition to outperforming conventional surface contacts, the edge-contact geometry allows a complete separation of the layer assembly and contact metallization processes. In graphene heterostructures, this enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-temperature mobility comparable to the theoretical phonon-scattering limit. The edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials.read more
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A review of the quantum Hall effects in MgZnO/ZnO heterostructures.
TL;DR: The growth of these samples, and the key characteristics of ozone-assisted molecular beam epitaxy required for their production are highlighted, as well as the physics of even-denominator fractional quantum Hall states, whose observation and underlying character remain elusive and exotic.
Journal ArticleDOI
A Klein-tunneling transistor with ballistic graphene
Quentin Wilmart,Salim Berrada,David Torrin,V. Hung Nguyen,Gwendal Fève,Jean-Marc Berroir,Philippe Dollfus,Bernard Plaçais +7 more
TL;DR: In this paper, the authors proposed a Klein tunneling transistor based on the geometrical optics of Dirac Fermions (DFs) for the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, leading to the tunable suppression of transistor transmission.
Journal ArticleDOI
Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET
Sangwoo Kang,Babak Fallahazad,Kayoung Lee,Hema C. P. Movva,Kyounghwan Kim,Chris M. Corbet,Takashi Taniguchi,Kenji Watanabe,Luigi Colombo,Leonard F. Register,Emanuel Tutuc,Sanjay K. Banerjee +11 more
TL;DR: In this paper, the authors presented the room temperature operation of a vertical tunneling field effect transistor using a stacked double bilayer graphene (BLG) and hexagonal boron nitride heterostructure.
Journal ArticleDOI
Quantum Hall Effect in Electron-Doped Black Phosphorus Field-Effect Transistors.
Fangyuan Yang,Zuocheng Zhang,Naizhou Wang,Guo Jun Ye,Wenkai Lou,Xiaoying Zhou,Xiaoying Zhou,Kenji Watanabe,Takashi Taniguchi,Kai Chang,Kai Chang,Xianhui Chen,Yuanbo Zhang +12 more
TL;DR: Improved measurements under high magnetic fields revealed a large effective mass and an enhanced Landé g-factor, which points to strong electron-electron interaction in black phosphorus 2DEG, which may lead to exotic many-body quantum states in the fractional quantum Hall regime.
Journal ArticleDOI
Structural and Electronic Properties of Medium-Sized Aluminum-Doped Boron Clusters AlBn and Their Anions
TL;DR: In this paper, the incorporation of a valence isoelectronic Al atom into binary boron clusters was explored, and it was shown that the Al atom can be incorporated into a binary binary BORON-based compound to obtain unique molecular architecture and chemical bonding.
References
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Journal ArticleDOI
Van der Waals heterostructures
TL;DR: With steady improvement in fabrication techniques and using graphene’s springboard, van der Waals heterostructures should develop into a large field of their own.
Journal ArticleDOI
Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Journal ArticleDOI