Journal ArticleDOI
Oxide-based RRAM materials for neuromorphic computing
XiaoLiang Hong,Desmond Jia Jun Loy,Putu Andhita Dananjaya,Funan Tan,CheeMang Ng,Wen Siang Lew +5 more
TLDR
A broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field is given.Abstract:
In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.read more
Citations
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Journal ArticleDOI
SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices.
TL;DR: This paper proposes a novel ‘Simultaneous Logic in-Memory’ (SLIM) methodology which is complementary to existing LIM approaches in literature and demonstrates novel SLIM bitcells comprising non-filamentary bilayer analog OxRAM devices with NMOS transistors.
Journal ArticleDOI
SLIM: Simultaneous Logic-in-Memory Computing Exploiting Bilayer Analog OxRAM Devices
TL;DR: In this paper, the authors proposed a novel "simultaneous logic in-memory" (SLIM) methodology that allows to implement both memory and logic operations simultaneously on the same bitcell in a non-destructive manner without losing the previously stored Memory state.
Journal ArticleDOI
Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications
TL;DR: Recent progress in the area of resistive random access memory (RRAM) technology which is considered one of the most standout emerging memory technologies owing to its high speed, low cost, enhanced storage density, potential applications in various fields, and excellent scalability is comprehensively reviewed.
Journal ArticleDOI
Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
Zongjie Shen,Zongjie Shen,Chun Zhao,Chun Zhao,Yanfei Qi,Yanfei Qi,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Li Yang,Cezhou Zhao,Cezhou Zhao +11 more
TL;DR: The bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short- term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity(STDP) reveal the great potential of R RAM devices in the field of neuromorphic application.
Journal ArticleDOI
Ferroic tunnel junctions and their application in neuromorphic networks
TL;DR: The goal is to give a broad review of ferroic tunnel junction based artificial synapses that can be applied to neuromorphic computing and to help further ongoing research in this field.
References
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