Showing papers on "Flexible electronics published in 2012"

Laser Scribing of High-Performance and Flexible Graphene-Based Electrochemical Capacitors

Abstract: Although electrochemical capacitors (ECs), also known as supercapacitors or ultracapacitors, charge and discharge faster than batteries, they are still limited by low energy densities and slow rate capabilities. We used a standard LightScribe DVD optical drive to do the direct laser reduction of graphite oxide films to graphene. The produced films are mechanically robust, show high electrical conductivity (1738 siemens per meter) and specific surface area (1520 square meters per gram), and can thus be used directly as EC electrodes without the need for binders or current collectors, as is the case for conventional ECs. Devices made with these electrodes exhibit ultrahigh energy density values in different electrolytes while maintaining the high power density and excellent cycle stability of ECs. Moreover, these ECs maintain excellent electrochemical attributes under high mechanical stress and thus hold promise for high-power, flexible electronics.

Self-limited plasmonic welding of silver nanowire junctions

Abstract: Flexible electronics and other nanoscale devices require simple yet reliable assembly procedures. An optical welding technique for metal nanowires, based on surface plasmon resonances, is now used to fabricate interconnected nanowire networks with enhanced electrical properties for use as transparent electrodes in solar cells and other electrical devices.

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

Abstract: A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated. Solution-processable metal-oxide semiconductors are attractive materials for low-cost, flexible electronics, but the need to anneal the deposited materials at relatively high temperatures limits the range of substrates on which such devices can be fabricated. Now Yong-Hoon Kim and colleagues demonstrate that irradiating the solution-cast films with deep ultraviolet light can obviate the need for an annealing step. In this system, photochemical activation serves essentially the same purpose as annealing, and the resulting semiconducting materials have device performance levels comparable to those produced using the high-temperature techniques. Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors1,2,3,4,5,6,7. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates8,9,10,11,12,13. But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature2,14,15,16,17,18,19, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm2 V−1 s−1 (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.

Hierarchical Three-Dimensional ZnCo2O4 Nanowire Arrays/Carbon Cloth Anodes for a Novel Class of High-Performance Flexible Lithium-Ion Batteries

Abstract: Flexible electronics is an emerging and promising technology for next generation of optoelectronic devices. Herein, hierarchical three-dimensional ZnCo2O4 nanowire arrays/carbon cloth composites were synthesized as high performance binder-free anodes for Li-ion battery with the features of high reversible capacity of 1300–1400 mAh g–1 and excellent cycling ability even after 160 cycles with a capacity of 1200 mAh g–1. Highly flexible full batteries were also fabricated, exhibiting high flexibility, excellent electrical stability, and superior electrochemical performances.

Flexible Electronics: The Next Ubiquitous Platform

Abstract: Thin-film electronics in its myriad forms has underpinned much of the technological innovation in the fields of displays, sensors, and energy conversion over the past four decades. This technology also forms the basis of flexible electronics. Here we review the current status of flexible electronics and attempt to predict the future promise of these pervading technologies in healthcare, environmental monitoring, displays and human-machine interactivity, energy conversion, management and storage, and communication and wireless networks.

Fabrication of flexible MoS2 thin-film transistor arrays for practical gas-sensing applications.

Abstract: By combining two kinds of solution-processable two-dimensional materials, a flexible transistor array is fabricated in which MoS2 thin film is used as the active channel and reduced graphene oxide (rGO) film is used as the drain and source electrodes. The simple device configuration and the 1.5 mm-long MoS2 channel ensure highly reproducible device fabrication and operation. This flexible transistor array can be used as a highly sensitive gas sensor with excellent reproducibility. Compared to using rGO thin film as the active channel, this new gas sensor exhibits much higher sensitivity. Moreover, functionalization of the MoS2 thin film with Pt nanoparticles further increases the sensitivity by up to ∼3 times. The successful incorporation of a MoS2 thin-film into the electronic sensor promises its potential application in various electronic devices.

A stable solution-processed polymer semiconductor with record high-mobility for printed transistors

Abstract: Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. We report herein the processing and optimisation of solution-processable polymer semiconductors for thin-film transistors, demonstrating very high field-effect mobility, high on/off ratio, and excellent shelf-life and operating stabilities under ambient conditions. Exceptionally high-gain inverters and functional ring oscillator devices on flexible substrates have been demonstrated. This optimised polymer semiconductor represents a significant progress in semiconductor development, dispelling prevalent skepticism surrounding practical usability of organic semiconductors for high-performance microelectronic devices, opening up application opportunities hitherto functionally or economically inaccessible with silicon technologies, and providing an excellent structural framework for fundamental studies of charge transport in organic systems.

Highly flexible MoS2 thin-film transistors with ion gel dielectrics.

Abstract: Molybdenum disulfide (MoS(2)) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm(2)/(V·s)) and a high on/off current ratio (10(5)). Furthermore, the MoS(2) transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics.

Flexible graphene-based lithium ion batteries with ultrafast charge and discharge rates

Abstract: There is growing interest in thin, lightweight, and flexible energy storage devices to meet the special needs for next-generation, high-performance, flexible electronics. Here we report a thin, lightweight, and flexible lithium ion battery made from graphene foam, a three-dimensional, flexible, and conductive interconnected network, as a current collector, loaded with Li4Ti5O12 and LiFePO4, for use as anode and cathode, respectively. No metal current collectors, conducting additives, or binders are used. The excellent electrical conductivity and pore structure of the hybrid electrodes enable rapid electron and ion transport. For example, the Li4Ti5O12/graphene foam electrode shows a high rate up to 200 C, equivalent to a full discharge in 18 s. Using them, we demonstrate a thin, lightweight, and flexible full lithium ion battery with a high-rate performance and energy density that can be repeatedly bent to a radius of 5 mm without structural failure and performance loss.

Very long Ag nanowire synthesis and its application in a highly transparent, conductive and flexible metal electrode touch panel

Abstract: The future electronics will be soft, flexible and even stretchable to be more human friendly in the form of wearable computers. However, conventional electronic materials are usually brittle. Recently, carbon based materials are intensively investigated as a good candidate for flexible electronics but with limited mechanical and electrical performances. Metal is still the best material for electronics with great electrical properties but with poor transparency and mechanical performance. Here we present a simple approach to develop a synthesis method for very long metallic nanowires and apply them as new types of high performance flexible and transparent metal conductors as an alternative to carbon nanotubes, graphene and short nanowire based flexible transparent conductors and indium tin oxide based brittle transparent conductors. We found that very long metallic nanowire network conductors combined with a low temperature laser nano-welding process enabled superior transparent flexible conductors with high transmittance and high electrical conductivity. Further, we demonstrated highly flexible metal conductor LED circuits and transparent touch panels. The highly flexible and transparent metal conductors can be mounted on any non-planar surfaces and applied for various opto-electronics and ultimately for future wearable electronics.

Wafer-Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization

Abstract: Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

Graphene transfer: key for applications

Abstract: The first micrometer-sized graphene flakes extracted from graphite demonstrated outstanding electrical, mechanical and chemical properties, but they were too small for practical applications. However, the recent advances in graphene synthesis and transfer techniques have enabled various macroscopic applications such as transparent electrodes for touch screens and light-emitting diodes (LEDs) and thin-film transistors for flexible electronics in particular. With such exciting potential, a great deal of effort has been put towards producing larger size graphene in the hopes of industrializing graphene production. Little less than a decade after the first discovery, graphene now can be synthesized up to 30 inches in its diagonal size using chemical vapour deposition methods. In making this possible, it was not only the advances in the synthesis techniques but also the transfer methods that deliver graphene onto target substrates without significant mechanical damage. In this article, the recent advancements in transferring graphene to arbitrary substrates will be extensively reviewed. The methods are categorized into mechanical exfoliation, polymer-assisted transfer, continuous transfer by roll-to-roll process, and transfer-free techniques including direct synthesis on insulating substrates.

Transparent, Optical, Pressure‐Sensitive Artificial Skin for Large‐Area Stretchable Electronics

Abstract: Optical pressure sensors are highly responsive and are unaffected by surrounding parameters such as electronic noise, humidity, temperature, etc. A new type of optical pressure sensor is described that demonstrates the stretchability and transparency of a polydimethylsiloxane waveguide, while also serving as a substrate. The pressure sensors are both robust and easy to fabricate over a large area.

Patterning and Electronic Tuning of Laser Scribed Graphene for Flexible All-Carbon Devices

Abstract: Engineering a low-cost graphene-based electronic device has proven difficult to accomplish via a single-step fabrication process. Here we introduce a facile, inexpensive, solid-state method for generating, patterning, and electronic tuning of graphene-based materials. Laser scribed graphene (LSG) is shown to be successfully produced and selectively patterned from the direct laser irradiation of graphite oxide films under ambient conditions. Circuits and complex designs are directly patterned onto various flexible substrates without masks, templates, post-processing, transferring techniques, or metal catalysts. In addition, by varying the laser intensity and laser irradiation treatments, the electrical properties of LSG can be precisely tuned over 5 orders of magnitude of conductivity, a feature that has proven difficult with other methods. This inexpensive method for generating LSG on thin flexible substrates provides a mode for fabricating a low-cost graphene-based NO2 gas sensor and enables its use as a...

High-Performance Carbon Nanotube Transparent Conductive Films by Scalable Dip Coating

Abstract: Transparent conductive carbon nanotube (CNT) films were fabricated by dip-coating solutions of pristine CNTs dissolved in chlorosulfonic acid (CSA) and then removing the CSA. The film performance and morphology (including alignment) were controlled by the CNT length, solution concentration, coating speed, and level of doping. Using long CNTs (∼10 μm), uniform films were produced with excellent optoelectrical performance (∼100 Ω/sq sheet resistance at ∼90% transmittance in the visible), in the range of applied interest for touch screens and flexible electronics. This technique has potential for commercialization because it preserves the length and quality of the CNTs (leading to enhanced film performance) and operates at high CNT concentration and coating speed without using surfactants (decreasing production costs).

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

Abstract: Solution-processed thin-films of semiconducting carbon nanotubes as the channel material for flexible electronics simultaneously offers high performance, low cost, and ambient stability, which significantly outruns the organic semiconductor materials. In this work, we report the use of semiconductor-enriched carbon nanotubes for high-performance integrated circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The as-obtained thin-film transistors (TFTs) exhibit highly uniform device performance with on-current and transconductance up to 15 μA/μm and 4 μS/μm. By performing capacitance-voltage measurements, the gate capacitance of the nanotube TFT is precisely extracted and the corresponding peak effective device mobility is evaluated to be around 50 cm(2)V(-1)s(-1). Using such devices, digital logic gates including inverters, NAND, and NOR gates with superior bending stability have been demonstrated. Moreover, radio frequency measurements show that cutoff frequency of 170 MHz can be achieved in devices with a relatively long channel length of 4 μm, which is sufficient for certain wireless communication applications. This proof-of-concept demonstration indicates that our platform can serve as a foundation for scalable, low-cost, high-performance flexible electronics.

Recent advances in large-scale assembly of semiconducting inorganic nanowires and nanofibers for electronics, sensors and photovoltaics.

Abstract: Semiconducting inorganic nanowires (NWs), nanotubes and nanofibers have been extensively explored in recent years as potential building blocks for nanoscale electronics, optoelectronics, chemical/biological/optical sensing, and energy harvesting, storage and conversion, etc. Besides the top-down approaches such as conventional lithography technologies, nanowires are commonly grown by the bottom-up approaches such as solution growth, template-guided synthesis, and vapor–liquid–solid process at a relatively low cost. Superior performance has been demonstrated using nanowires devices. However, most of the nanowire devices are limited to the demonstration of single devices, an initial step toward nanoelectronic circuits, not adequate for production on a large scale at low cost. Controlled and uniform assembly of nanowires with high scalability is still one of the major bottleneck challenges towards the materials and device integration for electronics. In this review, we aim to present recent progress toward nanowire device assembly technologies, including flow-assisted alignment, Langmuir–Blodgett assembly, bubble-blown technique, electric/magnetic- field-directed assembly, contact/roll printing, planar growth, bridging method, and electrospinning, etc. And their applications in high-performance, flexible electronics, sensors, photovoltaics, bioelectronic interfaces and nano-resonators are also presented.

Rod‐Coating: Towards Large‐Area Fabrication of Uniform Reduced Graphene Oxide Films for Flexible Touch Screens

Abstract: A novel strategy is developed for the large-scale fabrication of reduced graphene oxide films directly on flexible substrates in a controlled manner by the combination of a rod-coating technique and room-temperature reduction of graphene oxide. The as-prepared films display excellent uniformity, good transparency and conductivity, and great flexibility in a touch screen.

Fabrication of Transistors on Flexible Substrates: from Mass‐Printing to High‐Resolution Alternative Lithography Strategies

Abstract: In this report, the development of conventional, mass-printing strategies into high-resolution, alternative patterning techniques is reviewed with the focus on large-area patterning of flexible thin-film transistors (TFTs) for display applications. In the first part, conventional and digital printing techniques are introduced and categorized as far as their development is relevant for this application area. The limitations of conventional printing guides the reader to the second part of the progress report: alternative-lithographic patterning on low-cost flexible foils for the fabrication of flexible TFTs. Soft and nanoimprint lithography-based patterning techniques and their limitations are surveyed with respect to patterning on low-cost flexible foils. These show a shift from fabricating simple microlense structures to more complicated, high-resolution electronic devices. The development of alternative, low-temperature processable materials and the introduction of high-resolution patterning strategies will lead to the low-cost, self-aligned fabrication of flexible displays and solar cells from cheaper but better performing organic materials.

All Graphene-Based Thin Film Transistors on Flexible Plastic Substrates

Abstract: High-performance, flexible all graphene-based thin film transistor (TFT) was fabricated on plastic substrates using a graphene active layer, graphene oxide (GO) dielectrics, and graphene electrodes. The GO dielectrics exhibit a dielectric constant (3.1 at 77 K), low leakage current (17 mA/cm2), breakdown bias (1.5 × 106 V/cm), and good mechanical flexibility. Graphene-based TFTs showed a hole and electron mobility of 300 and 250 cm2/(V·s), respectively, at a drain bias of −0.1 V. Moreover, graphene TFTs on the plastic substrates exhibited remarkably good mechanical flexibility and optical transmittance. This method explores a significant step for the application of graphene toward flexible and stretchable electronics.

Highly conductive and stretchable conductors fabricated from bacterial cellulose

Abstract: Advanced materials that can remain electrically conductive under substantial elastic stretch and bending have attracted extensive interest recently owing to their broad application potentials, particularly for flexible electronics. Here, we have developed a simple and inexpensive method to fabricate highly conductive and stretchable composites using bacterial cellulose (BC) pellicles as starting materials, which can be produced in large amounts on an industrial scale via a microbial fermentation process. The prepared pyrolyzed BC (p-BC)/polydimethylsiloxane (PDMS) composites exhibit a high electrical conductivity of 0.20–0.41 S cm−1, which is much higher than conventional carbon nanotubes and graphene-based composites. More importantly, the p-BC/PDMS composites that combine high stretchability with high conductivity show great electromechanical stability. Even after 1000 stretching cycles at the maximum strain of 80%, the resistance of the composites increased by only ∼10%. The resistance increased slightly (∼4%) after 5000 bending cycles with a maximum bending radius of 1.0 mm. Shu-Hong Yu and co-workers at the University of Science and Technology of China in Hefei have devised an easy and cost-effective approach to prepare flexible conductors. Increasingly, conducting materials are required to be stretchable and bendable - properties that are difficult to achieve with conventional conductors. Yu and colleagues have now turned to bacterial cellulose to get around this problem. Although cellulose is mostly known as a component of plants, it can be generated, in high purity, by some micro-organisms through fermentation - a facile process that can be carried out in large quantities. Bacterial cellulose pellicles were treated by freeze-drying and pyrolysis to give a robust aerogel composed of entangled nanofibres, which was then infiltrated with a polymer. The resulting composite material showed excellent electrical conductivity, which was maintained even under stretching and bending, and is thus very well suited to applications in flexible, foldable electronics. Highly conductive and stretchable conductors from bacterial cellulose (BC) can be fabricated through a simple and inexpensive method using bacterial cellulose pellicles as starting materials, which can be produced in large amounts on an industrial scale via a microbial fermentation process. The prepared pyrolyzed BC/polydimethylsiloxane composites exhibit highly stable electric conductivity even under high stretching and bending strain.

Large-scale integration of semiconductor nanowires for high-performance flexible electronics.

Abstract: High-performance flexible electronics has attracted much attention in recent years due to potential applications in flexible displays, artificial skin, radio frequency identification, sensor tapes, etc. Various materials such as organic and inorganic semiconductor nanowires, carbon nanotubes, graphene, etc. have been explored as the active semiconductor components for flexible devices. Among them, inorganic semiconductor nanowires are considered as highly promising materials due to their relatively high carrier mobility, reliable control on geometry and electronic properties, and cost-effective synthesis processes. In this review, recent progress on the assembly of high-performance inorganic semiconductor nanowires and their applications for large-scale flexible electronics will be summarized. In particular, nanowire-based integrated circuitry and high-frequency electronics will be highlighted.

Solderable and electroplatable flexible electronic circuit on a porous stretchable elastomer

Abstract: A variety of flexible and stretchable electronics have been reported for use in flexible electronic devices or biomedical applications. The practical and wider application of such flexible electronics has been limited because commercial electronic components are difficult to be directly integrated into flexible stretchable electronics and electroplating is still challenging. Here, we propose a novel method for fabricating flexible and stretchable electronic devices using a porous elastomeric substrate. Pressurized steam was applied to an uncured polydimethylsiloxane layer for the simple and cost-effective production of porous structure. An electroplated nickel anchor had a key role in bonding commercial electronic components on elastomers by soldering techniques, and metals could be stably patterned and electroplated for practical uses. The proposed technology was applied to develop a plaster electrocardiogram dry electrode and multi-channel microelectrodes that could be used as a long-term wearable biosignal monitor and for brain signal monitoring, respectively.

High-Efficiency, Microscale GaN Light-Emitting Diodes and Their Thermal Properties on Unusual Substrates

Abstract: Materials and processing schemes for inorganic light-emitting diodes (LEDs) are increasingly important for applications in areas ranging from consumer electronics to energy-effi cient lighting. Conventional routes to devices involve epitaxial growth of active materials followed by wafer dicing and pick-and-place robotic manipulation into individually packaged components, for interconnection by bulk wire bonding. Recently reported schemes based on advanced methods in epitaxial lift-off and deterministic assembly allow devices with extremely thin geometries, in layouts that can be interconnected by planar metallization and photolithography. [ 1‐6 ]

Review of Progress Toward 20% Efficiency Flexible CIGS Solar Cells and Manufacturing Issues of Solar Modules

Abstract: Solar cells based on chalcopyrite Cu(In, Ga)Se 2 (CIGS) absorber layers show the highest potential for low-cost solar electricity by yielding comparable efficiencies to polycrystalline Si wafer-based cells, while also offering inherent advantages of thin-film technology for cost reduction.Highest efficiency of 20.3% was recently achieved on rigid glass substrate. Deposition of CIGS films onto flexible substrates opens new fields of applications and could significantly decrease production costs by employing roll-to-roll manufacturing and monolithic integration of solar cells to develop modules. Whereas, some years back, it seemed difficult to reach performance levels on flexible substrates similar to that obtained on glass, recent results on flexible polyimide prove that the efficiency gap can be significantly reduced. Different materials, i.e., mostly metals or plastics, have been used as flexible substrates, with highest cell efficiency of 18.7% demonstrated on a polyimide film. Improvements in efficiencies of flexible solar cells and modules achieved over the past few decades are discussed in this paper, addressing the main characteristics of substrate materials. The technology transfer from laboratory research to large-scale industrial production of CIGS modules leads to new manufacturing challenges, mainly for CIGS deposition, interconnections of cells, and long-term performance stability.

Direct writing of flexible electronics through room temperature liquid metal ink.

Abstract: Background Conventional approaches of making a flexible circuit are generally complex, environment unfriendly, time and energy consuming, and thus expensive. Here, we describe for the first time the method of using high-performance GaIn10-based electrical ink, a significantly neglected room temperature liquid metal, as both electrical conductors and interconnects, for directly writing flexible electronics via a rather easy going and cost effective way. Methods The new generation electric ink was made and its wettability with various materials was modified to be easily written on a group of either soft or rigid substrates such as epoxy resin board, glass, plastic, silica gel, paper, cotton, textiles, cloth and fiber etc. Conceptual experiments were performed to demonstrate and evaluate the capability of directly writing the electrical circuits via the invented metal ink. Mechanisms involved were interpreted through a series of fundamental measurements. Results The electrical resistivity of the fluid like GaIn10-based material was measured as 34.5 µΩ·cm at 297 K by four point probe method and increased with addition of the oxygen quantity, which indicates it as an excellent metal ink. The conductive line can be written with features that are approximately 10 µm thick. Several functional devices such as a light emitting diode (LED) array showing designed lighting patterns and electrical fan were made to work by directly writing the liquid metal on the specific flexible substrates. And satisfactory performances were obtained. Conclusions The present method opens the way to directly and quickly writing flexible electronics which can be as simple as signing a name or drawing a picture on the paper. The unique merit of the GaIn10-based liquid metal ink lies in its low melting temperature, well controlled wettability, high electrical conductivity and good biocompability. The new electronics writing strategy and basic principle has generalized purpose and can be extended to more industrial areas, even daily life.

High mobility flexible graphene field-effect transistors with self-healing gate dielectrics.

Abstract: A high-mobility low-voltage graphene field-effect transistor (FET) array was fabricated on a flexible plastic substrate using high-capacitance natural aluminum oxide as a gate dielectric in a self-aligned device configuration. The high capacitance of the native aluminum oxide and the self-alignment, which minimizes access resistance, yield a high current on/off ratio and an operation voltage below 3 V, along with high electron and hole mobility of 230 and 300 cm2/V·s, respectively. Moreover, the native aluminum oxide is resistant to mechanical bending and exhibits self-healing upon electrical breakdown. These results indicate that self-aligned graphene FETs can provide remarkably improved device performance and stability for a range of applications in flexible electronics.

Enhanced Cu2S/CdS Coaxial Nanowire Solar Cells by Piezo-Phototronic Effect

Abstract: Nanowire solar cells are promising candidates for powering nanosystems and flexible electronics. The strain in the nanowires, introduced during growth, device fabrication and/or application, is an important issue for piezoelectric semiconductor (like CdS, ZnO, and CdTe) based photovoltaic. In this work, we demonstrate the first largely enhanced performance of n-CdS/p-Cu2S coaxial nanowire photovoltaic (PV) devices using the piezo-phototronics effect when the PV device is subjected to an external strain. Piezo-phototronics effect could control the electron–hole pair generation, transport, separation, and/or recombination, thus enhanced the performance of the PV devices by as high as 70%. This effect offers a new concept for improving solar energy conversation efficiency by designing the orientation of the nanowires and the strain to be purposely introduced in the packaging of the solar cells. This study shed light on the enhanced flexible solar cells for applications in self-powered technology, environment...

Highly flexible pseudocapacitor based on freestanding heterogeneous MnO2/conductive polymer nanowire arrays

Abstract: Flexible electronics such as wearable electronic clothing, paper-like electronic devices, and flexible biomedical diagnostic devices are expected to be commercialized in the near future. Flexible energy storage will be needed to power these devices. Supercapacitor devices based on freestanding nanowire arrays are promising high power sources for these flexible electronics. Electrodes for these supercapacitor devices consisting of heterogeneous coaxial nanowires of poly (3,4-ethylenedioxythiophene) (PEDOT)-shell and MnO2-core materials have been shown in a half cell system to have improved capacitance and rate capabilities when compared to their pure nanomaterials; however, their performance in a full cell system has not been fully investigated. Herein, these coaxial nanowires are tested in both a symmetric and an asymmetric (utilizing a PEDOT nanowire anode) full cell configuration in the aspect of charge storage, charge rate, and flexibility without using any carbon additives and polymer binders. It is found that the asymmetric cell outperforms the symmetric cell in terms of energy density, rate capability, and cycle ability. The asymmetric device's electrode materials display an energy density of 9.8 Wh/kg even at a high power density of 850 W kg−1. This device is highly flexible and shows fast charging and discharging while still maintaining 86% of its energy density even under a highly flexed state. The total device is shown to have a total capacitance of 0.26 F at a maximum voltage of 1.7 V, which is capable of providing enough energy to power small portable devices.